Citation: Pil. Smeys et al., MATERIAL PROPERTIES OF LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED SILICON-NITRIDE FOR MODELING AND CALIBRATING THE SIMULATION OF ADVANCED ISOLATION STRUCTURES, Journal of applied physics, 78(4), 1995, pp. 2837-2842
Citation: E. Simoen et al., THE LOW-FREQUENCY NOISE OVERSHOOT IN PARTIALLY DEPLETED N-CHANNEL SILICON-ON-INSULATOR TWIN-MOSTS, I.E.E.E. transactions on electron devices, 41(11), 1994, pp. 1972-1976