THE LOW-FREQUENCY NOISE OVERSHOOT IN PARTIALLY DEPLETED N-CHANNEL SILICON-ON-INSULATOR TWIN-MOSTS

Authors
SIMOEN E SMEYS PIL CLAEYS C
Citation
E. Simoen et al., THE LOW-FREQUENCY NOISE OVERSHOOT IN PARTIALLY DEPLETED N-CHANNEL SILICON-ON-INSULATOR TWIN-MOSTS, I.E.E.E. transactions on electron devices, 41(11), 1994, pp. 1972-1976
Citations number
13
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
41
Issue
11
Year of publication
1994
Pages
1972 - 1976
Database
ISI
SICI code
0018-9383(1994)41:11<1972:TLNOIP>2.0.ZU;2-7
Abstract
This paper investigates the effect of the so-called twin-MOST structur e on the kink-related low-frequency (LF) noise overshoot, which is obs erved in partially depleted (PD) SOI nMOST's. As will be demonstrated, a significant reduction of the noise overshoot amplitude may be achie ved in such a configuration, compared with a single transistor having the same effective gate length. The observed reduction is stronger tha n the one predicted on purely geometrical grounds, indicating that the floating body effects are indeed successfully reduced by this structu re.