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Results:
1-24
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Results: 24
Authors:
SNOEKS E
MARSHALL T
PETRUZZELLO J
PASHLEY MD
CHAO LL
CARGILL GS
Citation: E. Snoeks et al., DIFFUSION LENGTHS OF CARRIERS IN N-TYPE AND P-TYPE ZNMGSSE CLADDING LAYERS OF GREEN LASER-DIODES, Journal of applied physics, 84(7), 1998, pp. 3611-3616
Authors:
CHAO LL
CARGILL GS
MARSHALL T
SNOEKS E
PETRUZZELLO J
PASHLEY M
Citation: Ll. Chao et al., SPECTRAL SHIFTS ASSOCIATED WITH DARK LINE DEFECTS IN DEGRADED II-VI LASER-DIODES, Applied physics letters, 72(14), 1998, pp. 1754-1756
Authors:
ZENG L
YANG BX
TAMARGO MC
SNOEKS E
ZHAO L
Citation: L. Zeng et al., QUALITY IMPROVEMENTS OF ZNXCDYMG1-X-YSE LAYERS GROWN ON INP SUBSTRATES BY A THIN ZNCDSE INTERFACIAL LAYER, Applied physics letters, 72(11), 1998, pp. 1317-1319
Authors:
SNOEKS E
ZHAO L
YANG B
CAVUS A
ZENG L
TAMARGO MC
Citation: E. Snoeks et al., STRUCTURAL QUALITY OF PSEUDOMORPHIC ZN0.5CD0.5SE LAYERS GROWN ON AN INGAAS OR INP BUFFER LAYER ON (001)INP SUBSTRATES, Journal of crystal growth, 179(1-2), 1997, pp. 83-92
Authors:
ZENG L
YANG BX
SHEWAREGED B
TAMARGO MC
WAN JZ
POLLAK FH
SNOEKS E
ZHAO L
Citation: L. Zeng et al., DETERMINATION OF DEFECT DENSITY IN ZNCDMGSE LAYERS GROWN ON INP USINGA CHEMICAL ETCH, Journal of applied physics, 82(7), 1997, pp. 3306-3309
Authors:
SNOEKS E
BOUTROS KS
BARONE J
Citation: E. Snoeks et al., STRESS-RELAXATION IN TUNGSTEN FILMS BY ION IRRADIATION, Applied physics letters, 71(2), 1997, pp. 267-269
Authors:
BRONGERSMA ML
SNOEKS E
POLMAN A
Citation: Ml. Brongersma et al., TEMPERATURE-DEPENDENCE OF MEV HEAVY-ION IRRADIATION-INDUCED VISCOUS-FLOW IN SIO2, Applied physics letters, 71(12), 1997, pp. 1628-1630
Authors:
CHAO LL
CARGILL GS
KOTHANDARAMAN C
MARSHALL T
SNOEKS E
BUIJS M
HABERERN K
PETRUZZELLO J
HAUGEN GM
LAW KK
Citation: Ll. Chao et al., ACTIVATION-ENERGY OF NONRADIATIVE PROCESSES IN DEGRADED II-VI LASER-DIODES, Applied physics letters, 70(5), 1997, pp. 535-537
Authors:
SNOEKS E
HERKO S
ZHAO L
YANG B
CAVUS A
ZENG L
TAMARGO MC
Citation: E. Snoeks et al., IMPROVEMENT IN QUALITY OF EPITAXIAL ZN0.5CD0.5SE LAYERS GROWN ON (001)INP SUBSTRATES BY USING AN INP BUFFER LAYER, Applied physics letters, 70(17), 1997, pp. 2259-2261
Authors:
SNOEKS E
KIK PG
POLMAN A
Citation: E. Snoeks et al., CONCENTRATION QUENCHING IN ERBIUM IMPLANTED ALKALI SILICATE-GLASSES, Optical materials, 5(3), 1996, pp. 159-167
Authors:
PRIOLO F
FRANZO G
COFFA S
POLMAN A
SNOEKS E
VANDENHOVEN GN
LIBERTINO S
LOMBARDO S
CAMPISANO SU
CARNERA A
Citation: F. Priolo et al., OPTICAL DOPING OF MATERIALS BY ERBIUM ION-IMPLANTATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 116(1-4), 1996, pp. 77-84
Authors:
VANDENHOVEN GN
SNOEKS E
POLMAN A
VANDAM C
VANUFFELEN JWM
SMIT MK
Citation: Gn. Vandenhoven et al., UP-CONVERSION IN ER-IMPLANTED AL2O3 WAVE-GUIDES, Journal of applied physics, 79(3), 1996, pp. 1258-1266
Authors:
SNOEKS E
VANDENHOVEN GN
POLMAN A
Citation: E. Snoeks et al., OPTIMIZATION OF AN ER-DOPED SILICA GLASS OPTICAL WAVE-GUIDE AMPLIFIER, IEEE journal of quantum electronics, 32(9), 1996, pp. 1680-1684
Authors:
SNOEKS E
VANDENHOVEN GN
POLMAN A
HENDRIKSEN B
DIEMEER MBJ
PRIOLO F
Citation: E. Snoeks et al., COOPERATIVE UP-CONVERSION IN ERBIUM-IMPLANTED SODA-LIME SILICATE GLASS OPTICAL WAVE-GUIDES, Journal of the Optical Society of America. B, Optical physics, 12(8), 1995, pp. 1468-1474
Authors:
POLMAN A
SNOEKS E
VANDENHOVEN GN
BRONGERSMA ML
SERNA R
SHIN JH
KIK P
RADIUS E
Citation: A. Polman et al., ION-BEAM SYNTHESIS OF PLANAR OPTOELECTRONIC DEVICES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 106(1-4), 1995, pp. 393-399
Authors:
SNOEKS E
LAGENDIJK A
POLMAN A
Citation: E. Snoeks et al., MEASURING AND MODIFYING THE SPONTANEOUS EMISSION RATE OF ERBIUM NEAR AN INTERFACE, Physical review letters, 74(13), 1995, pp. 2459-2462
Authors:
SNOEKS E
WEBER T
CACCIATO A
POLMAN A
Citation: E. Snoeks et al., MEV ION IRRADIATION-INDUCED CREATION AND RELAXATION OF MECHANICAL-STRESS IN SILICA, Journal of applied physics, 78(7), 1995, pp. 4723-4732
Authors:
SERNA R
SNOEKS E
VANDENHOVEN GN
POLMAN A
Citation: R. Serna et al., 1.5-MU-M ROOM-TEMPERATURE LUMINESCENCE FROM ER-IMPLANTED OXYGEN-DOPEDSILICON EPITAXIAL-FILMS GROWN BY MOLECULAR-BEAM EPITAXY, Journal of applied physics, 75(5), 1994, pp. 2644-2647
Authors:
FLEUSTER M
BUCHAL C
SNOEKS E
POLMAN A
Citation: M. Fleuster et al., OPTICAL AND STRUCTURAL-PROPERTIES OF MEV ERBIUM-IMPLANTED LINBO3, Journal of applied physics, 75(1), 1994, pp. 173-180
Authors:
FLEUSTER M
BUCHAL C
SNOEKS E
POLMAN A
Citation: M. Fleuster et al., RAPID THERMAL ANNEALING OF MEV ERBIUM IMPLANTED LINBO3 SINGLE-CRYSTALS FOR OPTICAL DOPING, Applied physics letters, 65(2), 1994, pp. 225-227
Authors:
SNOEKS E
POLMAN A
VOLKERT CA
Citation: E. Snoeks et al., DENSIFICATION, ANISOTROPIC DEFORMATION, AND PLASTIC-FLOW OF SIO2 DURING MEV HEAVY-ION IRRADIATION, Applied physics letters, 65(19), 1994, pp. 2487-2489
Authors:
POLMAN A
CUSTER JS
SNOEKS E
VANDENHOVEN GN
Citation: A. Polman et al., OPTICAL DOPING OF SILICON WITH ERBIUM BY ION-IMPLANTATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 653-658
Authors:
SNOEKS E
VANDENHOVEN GN
POLMAN A
Citation: E. Snoeks et al., OPTICAL DOPING OF SODA-LIME-SILICATE GLASS WITH ERBIUM BY ION-IMPLANTATION, Journal of applied physics, 73(12), 1993, pp. 8179-8183
Authors:
VANDENHOVEN GN
SNOEKS E
POLMAN A
VANUFFELEN JWM
OEI YS
SMIT MK
Citation: Gn. Vandenhoven et al., PHOTOLUMINESCENCE CHARACTERIZATION OF ER-IMPLANTED AL2O3 FILMS, Applied physics letters, 62(24), 1993, pp. 3065-3067
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1-24
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