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Authors: MEDEIROSRIBEIRO G DEOLIVEIRA AG RIBEIRO GM SOARES DAW
Citation: G. Medeirosribeiro et al., DX-CENTER ENERGY-LEVEL DEPENDENCE ON SILICON DOPING CONCENTRATION IN AL0.3GA0.7AS, Journal of electronic materials, 24(7), 1995, pp. 907-912

Authors: DEOLIVEIRA AG RIBEIRO GM SOARES DAW CORREA JA DASILVA MIN CHACHAM H
Citation: Ag. Deoliveira et al., PHOTOCONDUCTIVITY AND N-TYPE TO P-TYPE TRANSITION IN SILICON PLANAR-DOPED GAAS STRUCTURES WITH A DOPED CAP LAYER, Journal of applied physics, 78(4), 1995, pp. 2659-2665

Authors: DEOLIVEIRA AG RIBEIRO GM SOARES DAW CHACHAM H
Citation: Ag. Deoliveira et al., COMPETITION BETWEEN NEGATIVE AND POSITIVE PHOTOCONDUCTIVITY IN SILICON PLANAR-DOPED GAAS, Applied physics letters, 64(17), 1994, pp. 2258-2260
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