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Results: 1-12 |
Results: 12
ELECTRICAL CHARACTERIZATION OF SILICON PN-JUNCTIONS TERMINATED WITH DIAMOND
Authors: OLSSON J EDHOLM B SODERBARG A MCGINNIS S YEHODA J
Citation: J. Olsson et al., ELECTRICAL CHARACTERIZATION OF SILICON PN-JUNCTIONS TERMINATED WITH DIAMOND, DIAMOND AND RELATED MATERIALS, 5(12), 1996, pp. 1457-1461
MODIFICATION OF SILICON SURFACES WITH H2SO4-H2O2-HF AND HNO3-HF FOR WAFER BONDING APPLICATIONS
Authors: LJUNGBERG K JANSSON U BENGTSSON S SODERBARG A
Citation: K. Ljungberg et al., MODIFICATION OF SILICON SURFACES WITH H2SO4-H2O2-HF AND HNO3-HF FOR WAFER BONDING APPLICATIONS, Journal of the Electrochemical Society, 143(5), 1996, pp. 1709-1714
RELIABILITY EVALUATION OF MANUFACTURING PROCESSES FOR BIPOLAR AND MOSDEVICES ON SILICON-ON-DIAMOND MATERIALS
Authors: EDHOLM B SODERBARG A BENGTSSON S
Citation: B. Edholm et al., RELIABILITY EVALUATION OF MANUFACTURING PROCESSES FOR BIPOLAR AND MOSDEVICES ON SILICON-ON-DIAMOND MATERIALS, Journal of the Electrochemical Society, 143(4), 1996, pp. 1326-1334
TRANSIENT MEASUREMENTS OF HEAT DISTRIBUTION IN DEVICES FABRICATED ON SILICON-ON-DIAMOND MATERIAL
Authors: EDHOLM B SODERBARG A OLSSON J JOHANSSON E
Citation: B. Edholm et al., TRANSIENT MEASUREMENTS OF HEAT DISTRIBUTION IN DEVICES FABRICATED ON SILICON-ON-DIAMOND MATERIAL, JPN J A P 1, 34(9A), 1995, pp. 4706-4714
HIGH-CURRENT GAIN HYBRID LATERAL BIPOLAR OPERATION OF DMOS TRANSISTORS
Authors: OLSSON J EDHOLM B SODERBARG A BOHLIN K
Citation: J. Olsson et al., HIGH-CURRENT GAIN HYBRID LATERAL BIPOLAR OPERATION OF DMOS TRANSISTORS, I.E.E.E. transactions on electron devices, 42(9), 1995, pp. 1628-1635
THE EFFECTS OF HF CLEANING PRIOR TO SILICON-WAFER BONDING
Authors: LJUNGBERG K BACKLUND Y SODERBARG A BERGH M ANDERSSON MO BENGTSSON S
Citation: K. Ljungberg et al., THE EFFECTS OF HF CLEANING PRIOR TO SILICON-WAFER BONDING, Journal of the Electrochemical Society, 142(4), 1995, pp. 1297-1303
IMPROVED DIRECT BONDING OF SI AND SIO2 SURFACES BY CLEANING IN H2SO4-H2O2-HF
Authors: LJUNGBERG K SODERBARG A JANSSON U
Citation: K. Ljungberg et al., IMPROVED DIRECT BONDING OF SI AND SIO2 SURFACES BY CLEANING IN H2SO4-H2O2-HF, Applied physics letters, 67(5), 1995, pp. 650-652
CONTINUOUS INK-JET PRINT HEAD UTILIZING SILICON MICROMACHINED NOZZLES
Authors: SMITH L SODERBARG A BJORKENGREN U
Citation: L. Smith et al., CONTINUOUS INK-JET PRINT HEAD UTILIZING SILICON MICROMACHINED NOZZLES, Sensors and actuators. A, Physical, 43(1-3), 1994, pp. 311-316
CHARACTERIZATION OF SPONTANEOUSLY BONDED HYDROPHOBIC SILICON SURFACES
Authors: LJUNGBERG K SODERBARG A BENGTSSON S JAUHIAINEN A
Citation: K. Ljungberg et al., CHARACTERIZATION OF SPONTANEOUSLY BONDED HYDROPHOBIC SILICON SURFACES, Journal of the Electrochemical Society, 141(2), 1994, pp. 562-566
BURIED COBALT SILICIDE LAYERS IN SILICON CREATED BY WAFER BONDING
Authors: LJUNGBERG K SODERBARG A TIENSUU AL JOHANSSON S THUNGSTROM G PETERSSON CS
Citation: K. Ljungberg et al., BURIED COBALT SILICIDE LAYERS IN SILICON CREATED BY WAFER BONDING, Journal of the Electrochemical Society, 141(10), 1994, pp. 2829-2833
VERY HIGH-CURRENT GAIN ENHANCEMENT BY SUBSTRATE BIASING OF LATERAL BIPOLAR-TRANSISTORS ON THIN SOI
Authors: EDHOLM B OLSSON J SODERBARG A
Citation: B. Edholm et al., VERY HIGH-CURRENT GAIN ENHANCEMENT BY SUBSTRATE BIASING OF LATERAL BIPOLAR-TRANSISTORS ON THIN SOI, Microelectronic engineering, 22(1-4), 1993, pp. 379-382
A SELF-ALIGNED LATERAL BIPOLAR-TRANSISTOR REALIZED ON SIMOX-MATERIAL
Authors: EDHOLM B OLSSON J SODERBARG A
Citation: B. Edholm et al., A SELF-ALIGNED LATERAL BIPOLAR-TRANSISTOR REALIZED ON SIMOX-MATERIAL, I.E.E.E. transactions on electron devices, 40(12), 1993, pp. 2359-2360
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