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Results: 1-17 |
Results: 17
SOLUTE DIFFUSION OF AL-SUBSTITUTING ELEMENTS IN NI3AL AND THE DIFFUSION MECHANISM OF THE MINORITY COMPONENT
Authors: DIVINSKI SV FRANK S SODERVALL U HERZIG C
Citation: Sv. Divinski et al., SOLUTE DIFFUSION OF AL-SUBSTITUTING ELEMENTS IN NI3AL AND THE DIFFUSION MECHANISM OF THE MINORITY COMPONENT, Acta materialia, 46(12), 1998, pp. 4369-4380
SECONDARY-ION MASS-SPECTROMETRY ANALYSIS OF RARE-EARTH ELEMENTS IN GRANDITE GARNET AND OTHER SKARN RELATED SILICATES
Authors: NICOLESCU S CORNELL DH SODERVALL U ODELIUS H
Citation: S. Nicolescu et al., SECONDARY-ION MASS-SPECTROMETRY ANALYSIS OF RARE-EARTH ELEMENTS IN GRANDITE GARNET AND OTHER SKARN RELATED SILICATES, European journal of mineralogy, 10(2), 1998, pp. 251-259
DIFFUSION OF NITROGEN FROM A BURIED DOPING LAYER IN GALLIUM-ARSENIDE REVEALING THE PROMINENT ROLE OF AS INTERSTITIALS
Authors: BOSKER G STOLWIJK NA THORDSON JV SODERVALL U ANDERSSON TG
Citation: G. Bosker et al., DIFFUSION OF NITROGEN FROM A BURIED DOPING LAYER IN GALLIUM-ARSENIDE REVEALING THE PROMINENT ROLE OF AS INTERSTITIALS, Physical review letters, 81(16), 1998, pp. 3443-3446
OPTICAL STUDY OF APCVD-GROWN SI1-XGEX SI QUANTUM-WELL STRUCTURES UNDER DIFFERENT POSTGROWTH ANNEALING CONDITIONS/
Authors: ZHAO QX NUR O SODERVALL U PATEL CJ WILLANDER M HOLTZ PO DEBOER WB
Citation: Qx. Zhao et al., OPTICAL STUDY OF APCVD-GROWN SI1-XGEX SI QUANTUM-WELL STRUCTURES UNDER DIFFERENT POSTGROWTH ANNEALING CONDITIONS/, Journal of crystal growth, 193(3), 1998, pp. 328-334
ULTRACLEAN SI SI INTERFACE FORMATION BY SURFACE PREPARATION AND DIRECT BONDING IN ULTRAHIGH-VACUUM/
Authors: HERMANSSON K GREY F BENGTSSON S SODERVALL U
Citation: K. Hermansson et al., ULTRACLEAN SI SI INTERFACE FORMATION BY SURFACE PREPARATION AND DIRECT BONDING IN ULTRAHIGH-VACUUM/, Journal of the Electrochemical Society, 145(5), 1998, pp. 1645-1649
FAST DIFFUSION OF BORON IN THE INTERMETALLIC COMPOUND NI3AL
Authors: FRANK S SODERVALL U HERZIG C
Citation: S. Frank et al., FAST DIFFUSION OF BORON IN THE INTERMETALLIC COMPOUND NI3AL, Intermetallics, 5(3), 1997, pp. 221-227
2-DIMENSIONAL LIMITATIONS WHEN INCREASING THE SI-CONCENTRATION FROM DELTA-DOPING TO THIN SI-LAYERS IN GAAS
Authors: THORDSON JV ANDERSSON TG SWENSON G SODERVALL U
Citation: Jv. Thordson et al., 2-DIMENSIONAL LIMITATIONS WHEN INCREASING THE SI-CONCENTRATION FROM DELTA-DOPING TO THIN SI-LAYERS IN GAAS, Journal of crystal growth, 175, 1997, pp. 234-237
NEAR-SURFACE COMPOSITION OF ACID-LEACHED LABRADORITE INVESTIGATED BY SIMS
Authors: SCHWEDA P SJOBERG L SODERVALL U
Citation: P. Schweda et al., NEAR-SURFACE COMPOSITION OF ACID-LEACHED LABRADORITE INVESTIGATED BY SIMS, Geochimica et cosmochimica acta, 61(10), 1997, pp. 1985-1994
DEACTIVATION OF BE ACCEPTORS BY ATOMIC-HYDROGEN IN ALGAAS GAAS QUANTUM-WELL STRUCTURES/
Authors: ZHAO QX FIMLAND BO SODERVALL U WILLANDER M SELVIG E
Citation: Qx. Zhao et al., DEACTIVATION OF BE ACCEPTORS BY ATOMIC-HYDROGEN IN ALGAAS GAAS QUANTUM-WELL STRUCTURES/, Applied physics letters, 71(15), 1997, pp. 2139-2141
SELF-DIFFUSION OF NI IN SINGLE AND POLYCRYSTALS OF NI3AL - A STUDY OFSIMS AND RADIOTRACER ANALYSIS
Authors: FRANK S SODERVALL U HERZIG C
Citation: S. Frank et al., SELF-DIFFUSION OF NI IN SINGLE AND POLYCRYSTALS OF NI3AL - A STUDY OFSIMS AND RADIOTRACER ANALYSIS, Physica status solidi. b, Basic research, 191(1), 1995, pp. 45-55
USE OF ZINC DIFFUSION INTO GAAS FOR DETERMINING PROPERTIES OF GALLIUMINTERSTITIALS
Authors: BOSKER G STOLWIJK NA HETTWER HG RUCKI A JAGER W SODERVALL U
Citation: G. Bosker et al., USE OF ZINC DIFFUSION INTO GAAS FOR DETERMINING PROPERTIES OF GALLIUMINTERSTITIALS, Physical review. B, Condensed matter, 52(16), 1995, pp. 11927-11931
DIFFUSION OF TIN IN GERMANIUM STUDIED BY SECONDARY-ION MASS-SPECTROMETRY
Authors: FRIESEL M SODERVALL U GUST W
Citation: M. Friesel et al., DIFFUSION OF TIN IN GERMANIUM STUDIED BY SECONDARY-ION MASS-SPECTROMETRY, Journal of applied physics, 78(9), 1995, pp. 5351-5355
INFLUENCE OF PREBONDING CLEANING ON THE ELECTRICAL-PROPERTIES OF THE BURIED OXIDE OF BOND-AND-ETCHBACK SILICON-ON-INSULATOR MATERIALS
Authors: ERICSSON P BENGTSSON S SODERVALL U
Citation: P. Ericsson et al., INFLUENCE OF PREBONDING CLEANING ON THE ELECTRICAL-PROPERTIES OF THE BURIED OXIDE OF BOND-AND-ETCHBACK SILICON-ON-INSULATOR MATERIALS, Journal of applied physics, 78(5), 1995, pp. 3472-3480
CHARGE-CARRIER INJECTION INTO THE BURIED OXIDE OF WAFER-BONDED SILICON-ON-INSULATOR MATERIALS
Authors: BENGTSSON S ERICSSON P SODERVALL U MITANI K ABE T
Citation: S. Bengtsson et al., CHARGE-CARRIER INJECTION INTO THE BURIED OXIDE OF WAFER-BONDED SILICON-ON-INSULATOR MATERIALS, Journal of the Electrochemical Society, 142(8), 1995, pp. 2721-2726
ON THE CARRIER LIFETIME IN PERIODICALLY DELTA-DOPED GAAS
Authors: LARSSON A JONSSON B CODY JG ANDERSSON TG SODERVALL U
Citation: A. Larsson et al., ON THE CARRIER LIFETIME IN PERIODICALLY DELTA-DOPED GAAS, Semiconductor science and technology, 9(12), 1994, pp. 2190-2194
GROWTH AND CHARACTERIZATION OF DIGITAL AND COMPOSITIONALLY GRADED ALGAAS GAAS NONRECTANGULAR QUANTUM-WELLS/
Authors: WANG SM ANDERSSON TG CHEN WQ SODERVALL U THORDSON J
Citation: Sm. Wang et al., GROWTH AND CHARACTERIZATION OF DIGITAL AND COMPOSITIONALLY GRADED ALGAAS GAAS NONRECTANGULAR QUANTUM-WELLS/, Journal of crystal growth, 135(3-4), 1994, pp. 455-462
PHOSPHORUS DIFFUSION GETTERING OF GOLD IN SILICON - THE REVERSIBILITYOF THE GETTERING PROCESS
Authors: SVEINBJORNSSON EO ENGSTROM O SODERVALL U
Citation: Eo. Sveinbjornsson et al., PHOSPHORUS DIFFUSION GETTERING OF GOLD IN SILICON - THE REVERSIBILITYOF THE GETTERING PROCESS, Journal of applied physics, 73(11), 1993, pp. 7311-7321
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