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Results: 1-15 |
Results: 15
ELECTROMECHANICAL COUPLING-CONSTANT EXTRACTION OF THIN-FILM PIEZOELECTRIC MATERIALS USING A BULK ACOUSTIC-WAVE RESONATOR
Authors: NAIK RS LUTSKY JJ REIF R SODINI CG
Citation: Rs. Naik et al., ELECTROMECHANICAL COUPLING-CONSTANT EXTRACTION OF THIN-FILM PIEZOELECTRIC MATERIALS USING A BULK ACOUSTIC-WAVE RESONATOR, IEEE transactions on ultrasonics, ferroelectrics, and frequency control, 45(1), 1998, pp. 257-263
A 27-MW CMOS FRACTIONAL-N SYNTHESIZER USING DIGITAL COMPENSATION FOR 2.5-MB S GFSK MODULATION/
Authors: PERROTT MH TEWKSBURY TL SODINI CG
Citation: Mh. Perrott et al., A 27-MW CMOS FRACTIONAL-N SYNTHESIZER USING DIGITAL COMPENSATION FOR 2.5-MB S GFSK MODULATION/, IEEE journal of solid-state circuits, 32(12), 1997, pp. 2048-2060
SYSTEM-DESIGN FOR PIXEL PARALLEL IMAGE-PROCESSING
Authors: GEALOW JC HERRMANN FP HSU LT SODINI CG
Citation: Jc. Gealow et al., SYSTEM-DESIGN FOR PIXEL PARALLEL IMAGE-PROCESSING, IEEE transactions on very large scale integration (VLSI) systems, 4(1), 1996, pp. 32-41
A LOW-NOISE, HIGH-RESOLUTION SILICON TEMPERATURE SENSOR
Authors: SZAJDA KS SODINI CG BOWMAN HF
Citation: Ks. Szajda et al., A LOW-NOISE, HIGH-RESOLUTION SILICON TEMPERATURE SENSOR, IEEE journal of solid-state circuits, 31(9), 1996, pp. 1308-1313
A 256-ELEMENT ASSOCIATIVE PARALLEL PROCESSOR
Authors: HERRMANN FP SODINI CG
Citation: Fp. Herrmann et Cg. Sodini, A 256-ELEMENT ASSOCIATIVE PARALLEL PROCESSOR, IEICE transactions on electronics, E78C(6), 1995, pp. 613-618
A 256-ELEMENT ASSOCIATIVE PARALLEL PROCESSOR
Authors: HERRMANN FP SODINI CG
Citation: Fp. Herrmann et Cg. Sodini, A 256-ELEMENT ASSOCIATIVE PARALLEL PROCESSOR, IEEE journal of solid-state circuits, 30(4), 1995, pp. 365-370
AN INTEGRATED ANALOG SENSOR FOR AUTOMATIC ALIGNMENT
Authors: UMMINGER CB SODINI CG
Citation: Cb. Umminger et Cg. Sodini, AN INTEGRATED ANALOG SENSOR FOR AUTOMATIC ALIGNMENT, IEEE journal of solid-state circuits, 30(12), 1995, pp. 1382-1390
SUPPRESSION OF INTERFACE-STATE GENERATION IN REOXIDIZED NITRIDED-OXIDE GATE DIELECTRICS
Authors: KRISCH KS SODINI CG
Citation: Ks. Krisch et Cg. Sodini, SUPPRESSION OF INTERFACE-STATE GENERATION IN REOXIDIZED NITRIDED-OXIDE GATE DIELECTRICS, Journal of applied physics, 76(4), 1994, pp. 2284-2292
SI SI1-XGEX VALENCE-BAND DISCONTINUITY MEASUREMENTS USING A SEMICONDUCTOR-INSULATOR-SEMICONDUCTOR (SIS) HETEROSTRUCTURE/
Authors: GAN CH DELALAMO JA BENNETT BR MEYERSON BS CRABBE EF SODINI CG REIF LR
Citation: Ch. Gan et al., SI SI1-XGEX VALENCE-BAND DISCONTINUITY MEASUREMENTS USING A SEMICONDUCTOR-INSULATOR-SEMICONDUCTOR (SIS) HETEROSTRUCTURE/, I.E.E.E. transactions on electron devices, 41(12), 1994, pp. 2430-2439
16-CHANNEL OVERSAMPLED ANALOG-TO-DIGITAL CONVERTER
Authors: NADEEM S SODINI CG LEE HS
Citation: S. Nadeem et al., 16-CHANNEL OVERSAMPLED ANALOG-TO-DIGITAL CONVERTER, IEEE journal of solid-state circuits, 29(9), 1994, pp. 1077-1085
MOSFET THERMAL NOISE MODELING FOR ANALOG INTEGRATED-CIRCUITS
Authors: WANG B HELLUMS JR SODINI CG
Citation: B. Wang et al., MOSFET THERMAL NOISE MODELING FOR ANALOG INTEGRATED-CIRCUITS, IEEE journal of solid-state circuits, 29(7), 1994, pp. 833-835
SPECIAL SECTION ON THE 1992 VLSI CIRCUITS SYMPOSIUM - FOREWORD
Authors: SODINI CG MASUHARA T
Citation: Cg. Sodini et T. Masuhara, SPECIAL SECTION ON THE 1992 VLSI CIRCUITS SYMPOSIUM - FOREWORD, IEICE transactions on electronics, E76C(5), 1993, pp. 746-747
A CCD CMOS-BASED IMAGER WITH INTEGRATED FOCAL-PLANE SIGNAL-PROCESSING
Authors: KEAST CL SODINI CG
Citation: Cl. Keast et Cg. Sodini, A CCD CMOS-BASED IMAGER WITH INTEGRATED FOCAL-PLANE SIGNAL-PROCESSING, IEICE transactions on electronics, E76C(5), 1993, pp. 771-777
A CCD CMOS-BASED IMAGER WITH INTEGRATED FOCAL PLANE SIGNAL-PROCESSING
Authors: KEAST CL SODINI CG
Citation: Cl. Keast et Cg. Sodini, A CCD CMOS-BASED IMAGER WITH INTEGRATED FOCAL PLANE SIGNAL-PROCESSING, IEEE journal of solid-state circuits, 28(4), 1993, pp. 431-437
LOW-TEMPERATURE FURNACE-GROWN REOXIDIZED NITRIDED OXIDE GATE DIELECTRICS AS A BARRIER TO BORON PENETRATION
Authors: FANG H KRISCH KS GROSS BJ SODINI CG CHUNG J ANTONIADIS DA
Citation: H. Fang et al., LOW-TEMPERATURE FURNACE-GROWN REOXIDIZED NITRIDED OXIDE GATE DIELECTRICS AS A BARRIER TO BORON PENETRATION, IEEE electron device letters, 13(4), 1992, pp. 217-219
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