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Results:
1-7
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Results: 7
Authors:
WATKINS SP
ARES R
SOERENSEN G
ZHONG W
TRAN CA
BRYCE JE
BOLOGNESI CR
Citation: Sp. Watkins et al., ATOMIC-FORCE MICROSCOPY STUDY OF MORPHOLOGY AND DISLOCATION-STRUCTUREOF INAS AND GASB GROWN ON HIGHLY MISMATCHED SUBSTRATES, Journal of crystal growth, 170(1-4), 1997, pp. 788-793
Authors:
BOLOGNESI CR
DVORAK MW
SOERENSEN G
WATKINS SP
Citation: Cr. Bolognesi et al., IMPROVED BREAKDOWN VOLTAGES IN SUBMICROMETER PLANAR GAAS-MESFETS WITHA THIN (GA,IN)P SURFACE-LAYER, Electronics Letters, 33(7), 1997, pp. 636-637
Authors:
LAVOIE C
PINNINGTON T
TIEDJE T
HUTTER JL
SOERENSEN G
STREATER R
Citation: C. Lavoie et al., INDIUM-INDUCED SMOOTHING OF GAAS FILMS DURING MBE GROWTH, Canadian journal of physics, 74, 1996, pp. 49-53
Authors:
WATKINS SP
TRAN CA
SOERENSEN G
CHEUNG HD
ARES RA
LACROIX Y
THEWALT MLW
Citation: Sp. Watkins et al., CHARACTERIZATION OF VERY HIGH-PURITY INAS GROWN USING TRIMETHYLINDIUMAND TERTIARYBUTYLARSINE, Journal of electronic materials, 24(11), 1995, pp. 1583-1590
Authors:
TRAN CA
ARES R
WATKINS SP
SOERENSEN G
LACROIX Y
Citation: Ca. Tran et al., ATOMIC LAYER EPITAXY OF INAS USING TERTIARYBUTYLARSINE, Journal of electronic materials, 24(11), 1995, pp. 1597-1603
Authors:
SOERENSEN G
GYGAX S
Citation: G. Soerensen et S. Gygax, EVALUATION OF OXYGEN-ISOTOPE EXPERIMENTS ON PR-SUBSTITUTED, CA-SUBSTITUTED, AND ZN-SUBSTITUTED YBA2CU3O7, Physical review. B, Condensed matter, 51(17), 1995, pp. 11848-11859
Authors:
WATKINS SP
TRAN CA
ARES R
SOERENSEN G
Citation: Sp. Watkins et al., HIGH-MOBILITY INAS GROWN ON GAAS SUBSTRATES USING TERTIARYBUTYLARSINEAND TRIMETHYLINDIUM, Applied physics letters, 66(7), 1995, pp. 882-884
Risultati:
1-7
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