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Results: 1-10 |
Results: 10
THE INFLUENCE OF MECHANICAL-STRESS ON THE DIELECTRIC-BREAKDOWN FIELD-STRENGTH OF THIN SIO2-FILMS
Authors: JEFFERY S SOFIELD CJ PETHICA JB
Citation: S. Jeffery et al., THE INFLUENCE OF MECHANICAL-STRESS ON THE DIELECTRIC-BREAKDOWN FIELD-STRENGTH OF THIN SIO2-FILMS, Applied physics letters, 73(2), 1998, pp. 172-174
SURFACE MODIFICATION OF MGO SUBSTRATES FROM AQUEOUS EXPOSURE - AN ATOMIC-FORCE MICROSCOPY STUDY
Authors: HOLT SA JONES CF WATSON GS CROSSLEY A JOHNSTON C SOFIELD CJ MYHRA S
Citation: Sa. Holt et al., SURFACE MODIFICATION OF MGO SUBSTRATES FROM AQUEOUS EXPOSURE - AN ATOMIC-FORCE MICROSCOPY STUDY, Thin solid films, 292(1-2), 1997, pp. 96-102
WTE2 SURFACES IN UHV-STM IMAGE-FORMATION AND ANALYSIS OF POINT-DEFECTSTRUCTURES
Authors: CROSSLEY JAA SOFIELD CJ MYHRA S
Citation: Jaa. Crossley et al., WTE2 SURFACES IN UHV-STM IMAGE-FORMATION AND ANALYSIS OF POINT-DEFECTSTRUCTURES, Surface science, 380(2-3), 1997, pp. 568-575
TIME-OF-FLIGHT MEDIUM-ENERGY ION-SCATTERING STUDY OF EPITAXIAL SI SI1-XGEX SUPERLATTICE STRUCTURES/
Authors: MCCONVILLE CF NOAKES TCQ SUGDEN S HUCKNELL PK SOFIELD CJ
Citation: Cf. Mcconville et al., TIME-OF-FLIGHT MEDIUM-ENERGY ION-SCATTERING STUDY OF EPITAXIAL SI SI1-XGEX SUPERLATTICE STRUCTURES/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 118(1-4), 1996, pp. 573-577
ION-SCATTERING FOR IN-SITU CHARACTERIZATION OF COMPOSITION OF LA2-XSRXCUO4 FILMS
Authors: HUCKNALL PK SUGDEN S SOFIELD CJ HARKER AH MACHLER E LOCQUET JP
Citation: Pk. Hucknall et al., ION-SCATTERING FOR IN-SITU CHARACTERIZATION OF COMPOSITION OF LA2-XSRXCUO4 FILMS, Applied physics letters, 69(20), 1996, pp. 3081-3083
OXIDATION OF SILICON - THE VLSI GATE DIELECTRIC
Authors: SOFIELD CJ STONEHAM AM
Citation: Cj. Sofield et Am. Stoneham, OXIDATION OF SILICON - THE VLSI GATE DIELECTRIC, Semiconductor science and technology, 10(3), 1995, pp. 215-244
IN-SITU LOW-TEMPERATURE CLEANING OF SILICON SURFACES USING HYDROGEN-ATOMS
Authors: CROSSLEY A SOFIELD CJ SUGDEN S CLAMPITT R BRADLEY C
Citation: A. Crossley et al., IN-SITU LOW-TEMPERATURE CLEANING OF SILICON SURFACES USING HYDROGEN-ATOMS, Vacuum, 46(7), 1995, pp. 667-672
A STUDY COMPARING MEASUREMENTS OF ROUGHNESS OF SILICON AND SIO2 SURFACES AND INTERFACES USING SCANNING PROBE MICROSCOPY AND NEUTRON REFLECTIVITY
Authors: CROSSLEY A SOFIELD CJ GOFF JP LAKE ACI HUTCHINGS MT MENELLE A
Citation: A. Crossley et al., A STUDY COMPARING MEASUREMENTS OF ROUGHNESS OF SILICON AND SIO2 SURFACES AND INTERFACES USING SCANNING PROBE MICROSCOPY AND NEUTRON REFLECTIVITY, Journal of non-crystalline solids, 187, 1995, pp. 221-226
PROBING THE INTERFACIAL AND SUBSURFACE STRUCTURE OF SI SI1-XGEX MULTILAYERS/
Authors: SUGDEN S SOFIELD CJ NOAKES TCQ KUBIAK RAA MCCONVILLE CF
Citation: S. Sugden et al., PROBING THE INTERFACIAL AND SUBSURFACE STRUCTURE OF SI SI1-XGEX MULTILAYERS/, Applied physics letters, 66(21), 1995, pp. 2849-2851
STM ANALYSIS OF WTE2 SURFACES - CORRELATION WITH CRYSTAL AND ELECTRONIC-STRUCTURES
Authors: CROSSLEY A MYHRA S SOFIELD CJ
Citation: A. Crossley et al., STM ANALYSIS OF WTE2 SURFACES - CORRELATION WITH CRYSTAL AND ELECTRONIC-STRUCTURES, Surface science, 318(1-2), 1994, pp. 39-45
Risultati: 1-10 |