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Results: 1-8 |
Results: 8

Authors: MARMORSTEIN A VOUTSAS AT SOLANKI R
Citation: A. Marmorstein et al., A SYSTEMATIC STUDY AND OPTIMIZATION OF PARAMETERS AFFECTING GRAIN-SIZE AND SURFACE-ROUGHNESS IN EXCIMER-LASER ANNEALED POLYSILICON THIN-FILMS, Journal of applied physics, 82(9), 1997, pp. 4303-4309

Authors: ENGELMANN R FERGUSON J SOLANKI R
Citation: R. Engelmann et al., QUANTUM-WELL ACTIVATED PHOSPHORS - A NEW CONCEPT FOR ELECTROLUMINESCENT DISPLAYS, Applied physics letters, 70(4), 1997, pp. 411-413

Authors: FOGARTY J KONG W SOLANKI R
Citation: J. Fogarty et al., MONTE-CARLO SIMULATION OF HIGH-FIELD ELECTRON-TRANSPORT IN ZNS, Solid-state electronics, 38(3), 1995, pp. 653-660

Authors: KONG W AHMED S FERGUSON J SOLANKI R
Citation: W. Kong et al., VIOLET LIGHT-EMITTING SRS SRCL-EU THIN-FILM ELECTROLUMINESCENT DEVICES/, Applied physics letters, 67(1), 1995, pp. 7-9

Authors: KONG W FOGARTY J SOLANKI R TUENGE RT
Citation: W. Kong et al., WHITE-LIGHT EMITTING SRS-PR ELECTROLUMINESCENT DEVICES FABRICATED VIAATOMIC LAYER EPITAXY, Applied physics letters, 66(4), 1995, pp. 419-421

Authors: KIM DM LEE JW DOSLUOGLU T SOLANKI R QIAN F
Citation: Dm. Kim et al., HIGH-SPEED LATERAL POLYSILICON PHOTODIODES, Semiconductor science and technology, 9(6), 1994, pp. 1276-1278

Authors: KONG W SOLANKI R
Citation: W. Kong et R. Solanki, THE EFFECT OF ULTRAVIOLET-RADIATION ON A ZNS-TB THIN-FILM ELECTROLUMINESCENT DEVICE, Journal of applied physics, 75(7), 1994, pp. 3311-3315

Authors: KONG W FOGARTY J SOLANKI R
Citation: W. Kong et al., ATOMIC LAYER EPITAXY OF ZNS-TB THIN-FILM ELECTROLUMINESCENT DEVICES, Applied physics letters, 65(6), 1994, pp. 670-672
Risultati: 1-8 |