Authors:
SCHIRM KM
SOUKIASSIAN P
MANGAT PS
SOONCKINDT L
Citation: Km. Schirm et al., SCHOTTKY-BARRIER AND INTERFACE FORMATION OF CS GASB(110) AND RB/GASB(110) AT ROOM-TEMPERATURE/, Physical review. B, Condensed matter, 49(8), 1994, pp. 5490-5496
Authors:
SCHIRM KM
SOUKIASSIAN P
MANGAT PS
HURYCH Z
SOONCKINDT L
BONNET JJ
Citation: Km. Schirm et al., IMPORTANCE OF DEFECTS AND DOPANT NATURE IN ALKALI-METAL III-V-SEMICONDUCTOR INTERFACE FORMATION AND PROMOTED OXIDATION, Applied surface science, 68(3), 1993, pp. 417-425
Authors:
BONNET JJ
SOONCKINDT L
SCHIRM KM
NISHIGAKI S
HIRICOVINI K
BONNET JE
SOUKIASSIAN P
Citation: Jj. Bonnet et al., SYNCHROTRON-RADIATION STUDY OF RB P-GASB(110) INTERFACE FORMATION ANDBAND BENDING AT LOW-TEMPERATURE/, Applied surface science, 68(3), 1993, pp. 427-432