Citation: Rp. Southwell et Eg. Seebauer, KINETICS OF TISI2 FORMATION AND SILICON CONSUMPTION DURING CHEMICAL-VAPOR-DEPOSITION, Journal of the Electrochemical Society, 144(6), 1997, pp. 2122-2137
Citation: Rp. Southwell et al., OPTIMIZATION OF SELECTIVE TISI2 CHEMICAL-VAPOR-DEPOSITION BY MECHANISTIC CHEMICAL-KINETICS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(3), 1996, pp. 928-934
Citation: Rp. Southwell et Eg. Seebauer, A PREDICTIVE KINETIC-MODEL FOR THE CHEMICAL-VAPOR-DEPOSITION OF TISI2, Journal of the Electrochemical Society, 143(5), 1996, pp. 1726-1736
Citation: Rp. Southwell et Eg. Seebauer, ADSORPTION OF TICL4 ON TISI2 - APPLICATION TO SILICIDE CHEMICAL-VAPOR-DEPOSITION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(2), 1995, pp. 221-229
Citation: Rp. Southwell et Eg. Seebauer, DIFFERENTIAL-CONVERSION TEMPERATURE-PROGRAMMED DESORPTION - A NEW METHOD FOR OBTAINING BIMOLECULAR SURFACE RATE CONSTANTS, Surface science, 340(3), 1995, pp. 281-292
Citation: Rp. Southwell et Eg. Seebauer, SIH4 ON TISI2 - AN INVESTIGATION OF GAS-ADSORPTION ON METAL-LIKE COMPOUNDS, Surface science, 329(1-2), 1995, pp. 107-114