ACNP - Italian Periodicals Catalogue

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Results: 10

AN AB-INITIO STUDY OF SE-REACTED GAAS(001) SURFACES

Authors: GUNDEL S SPAHN W FASCHINGER W LANDWEHR G

Citation: S. Gundel et al., AN AB-INITIO STUDY OF SE-REACTED GAAS(001) SURFACES, Journal of crystal growth, 185, 1998, pp. 80-84

START OF MISFIT RELAXATION IN GAAS-ZNSE HETEROSTRUCTURES

Authors: RESS HR SPAHN W EBEL R NURNBERGER J KELLER M SCHAFER H KORN M EHINGER M FASCHINGER W LANDWEHR G

Citation: Hr. Ress et al., START OF MISFIT RELAXATION IN GAAS-ZNSE HETEROSTRUCTURES, Journal of crystal growth, 185, 1998, pp. 90-94

OPTICAL-PROPERTIES AND DEFECT CHARACTERIZATION OF ZNSE LASER-DIODES GROWN ON TELLURIUM-TERMINATED GAAS

Authors: ALBERT D OLSZOWI B SPAHN W NURNBERGER J SCHULL K KORN M HOCK V EHINGER M FASCHINGER W LANDWEHR G

Citation: D. Albert et al., OPTICAL-PROPERTIES AND DEFECT CHARACTERIZATION OF ZNSE LASER-DIODES GROWN ON TELLURIUM-TERMINATED GAAS, Journal of crystal growth, 185, 1998, pp. 571-574

APPLICATION OF WIDE-GAP II-VI COMPOUNDS AS EMITTERS AND DETECTORS

Authors: FASCHINGER W SPAHN W NURNBERGER J GERHARD A KORN M SCHULL K ALBERT D RESS H EBEL R SCHMITT R OLSZOWI B EHINGER M LANDWEHR G

Citation: W. Faschinger et al., APPLICATION OF WIDE-GAP II-VI COMPOUNDS AS EMITTERS AND DETECTORS, Physica status solidi. b, Basic research, 202(2), 1997, pp. 695-706

NONMETAL IN-SITU AND EX-SITU OHMIC CONTACTS TO N-ZNSE

Authors: SCHULL K SPAHN W HOCK V LUNZ U EHINGER M FASCHINGER W LANDWEHR G

Citation: K. Schull et al., NONMETAL IN-SITU AND EX-SITU OHMIC CONTACTS TO N-ZNSE, Semiconductor science and technology, 12(4), 1997, pp. 485-489

THE INITIAL GROWTH OF ZNSE ON TE-TERMINATED, SE-TERMINATED AND ZN-TERMINATED GAAS(100)

Authors: SPAHN W RESS HR FISCHER C EHINGER M LANDWEHR G

Citation: W. Spahn et al., THE INITIAL GROWTH OF ZNSE ON TE-TERMINATED, SE-TERMINATED AND ZN-TERMINATED GAAS(100), Semiconductor science and technology, 12(2), 1997, pp. 234-239

INVESTIGATIONS ON ZNSE GAAS INTERFACE BY TREATMENT OF GAAS (2X4) SURFACE WITH TE AND MG/

Authors: EBEL R SPAHN W RESS HR ALBERT D SCHAFER H EHINGER M FASCHINGER W LANDWEHR G

Citation: R. Ebel et al., INVESTIGATIONS ON ZNSE GAAS INTERFACE BY TREATMENT OF GAAS (2X4) SURFACE WITH TE AND MG/, Acta Physica Polonica. A, 90(4), 1996, pp. 767-772

THE GROWTH START ON THE HETEROVALENT GAAS-ZNSE INTERFACE UNDER TE, SEAND ZN TERMINATION

Authors: SPAHN W RESS HR SCHULL K EHINGER M HOMMEL D LANDWEHR G

Citation: W. Spahn et al., THE GROWTH START ON THE HETEROVALENT GAAS-ZNSE INTERFACE UNDER TE, SEAND ZN TERMINATION, Journal of crystal growth, 159(1-4), 1996, pp. 761-765

MECHANISMS OF MOLECULAR-BEAM EPITAXIAL-GROWTH OF (001) HGTE

Authors: OEHLING S EHINGER M SPAHN W WAAG A BECKER CR LANDWEHR G

Citation: S. Oehling et al., MECHANISMS OF MOLECULAR-BEAM EPITAXIAL-GROWTH OF (001) HGTE, Journal of applied physics, 79(2), 1996, pp. 748-751

WIDE-GAP CD1-XMGXTE - MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION

Authors: WAAG A FISCHER F LITZ T KUHNHEINRICH B ZEHNDER U OSSAU W SPAHN W HEINKE H LANDWEHR G

Citation: A. Waag et al., WIDE-GAP CD1-XMGXTE - MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION, Journal of crystal growth, 138(1-4), 1994, pp. 155-160

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