OPTICAL-PROPERTIES AND DEFECT CHARACTERIZATION OF ZNSE LASER-DIODES GROWN ON TELLURIUM-TERMINATED GAAS

We present studies of electrical properties, electroluminescence (EL) and degradation behaviour of laser diodes grown on GaAs, terminated wi th Te (Te:GaAs). Compared to conventional lasers (grown on Zn-treated GaAs), the lasers grown on Te:GaAs show a comparable stacking fault de nsity, but higher spontaneous emission and very low threshold current densities. The degradation of such a laser structure has been observed through a transparent contact using electroluminescence imaging. As w ith conventional laser diodes, dark spots are observed and the dimming and growth of these dark spots has been monitored during the lifetime of the device. In addition, a continuous darkening of the background between the spots has been also observed. (C) 1998 Elsevier Science B. V. All rights reserved.