Citation: Sg. Sridhara et al., ABSORPTION-COEFFICIENT OF 4H SILICON-CARBIDE FROM 3900 TO 3250 ANGSTROM, Journal of applied physics, 84(5), 1998, pp. 2963-2964
Authors:
LARKIN DJ
SRIDHARA SG
DEVATY RP
CHOYKE WJ
Citation: Dj. Larkin et al., HYDROGEN INCORPORATION IN BORON-DOPED 6H-SIC CVD EPILAYERS PRODUCED USING SITE-COMPETITION EPITAXY, Journal of electronic materials, 24(4), 1995, pp. 289-294