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Authors: EDIRISINGHE SP STATONBEVAN A FAWCETT PN JOYCE BA

Citation: Sp. Edirisinghe et al., TRANSMISSION ELECTRON-MICROSCOPY STUDY OF IN0.25GA0.75AS EPILAYERS GROWN ON GAAS(001) BY MOLECULAR-BEAM EPITAXY - THE EFFECT OF EPILAYER THICKNESS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(3), 1995, pp. 967-973