TRANSMISSION ELECTRON-MICROSCOPY STUDY OF IN0.25GA0.75AS EPILAYERS GROWN ON GAAS(001) BY MOLECULAR-BEAM EPITAXY - THE EFFECT OF EPILAYER THICKNESS

Authors
EDIRISINGHE SP STATONBEVAN A FAWCETT PN JOYCE BA
Citation
Sp. Edirisinghe et al., TRANSMISSION ELECTRON-MICROSCOPY STUDY OF IN0.25GA0.75AS EPILAYERS GROWN ON GAAS(001) BY MOLECULAR-BEAM EPITAXY - THE EFFECT OF EPILAYER THICKNESS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(3), 1995, pp. 967-973
Citations number
35
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
13
Issue
3
Year of publication
1995
Pages
967 - 973
Database
ISI
SICI code
1071-1023(1995)13:3<967:TESOIE>2.0.ZU;2-C