Authors: KASCHIEVA S STEFANOV KG KARPUZOV D

Citation: S. Kaschieva et al., ELECTRON-IRRADIATION OF ION-IMPLANTED N-TYPE SI-SIO2 STRUCTURES STUDIED BY DEEP-LEVEL TRANSIENT SPECTROSCOPY, Applied physics A: Materials science & processing, 66(5), 1998, pp. 561-563

Authors: STEFANOV KG KASCHIEVA S KARPUZOV D

Citation: Kg. Stefanov et al., ELECTRICAL CHARACTERIZATION OF DEFECTS INDUCED BY 12 MEV ELECTRONS INP-TYPE SI-SIO2 STRUCTURES, Vacuum, 51(2), 1998, pp. 235-237