AAAAAA
Results:
1-9
|
Results: 9
Authors:
STEIMETZ E
RICHTER W
SCHIENLE F
FISCHER D
KLEIN M
ZETTLER JT
Citation: E. Steimetz et al., THE EFFECT OF DIFFERENT GROUP-V PRECURSORS ON THE EVOLUTION OF QUANTUM DOTS MONITORED BY OPTICAL IN-SITU MEASUREMENTS, JPN J A P 1, 37(3B), 1998, pp. 1483-1486
Authors:
WESTWOOD DI
SOBIESIERSKI Z
MATTHAI CC
STEIMETZ E
ZETTLER T
RICHTER W
Citation: Di. Westwood et al., PROCESSES OF QUANTUM-DOT FORMATION IN THE INAS ON GAAS(001) SYSTEM - A REFLECTANCE ANISOTROPY SPECTROSCOPY STUDY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 2358-2366
Authors:
WESTWOOD DI
SOBIESIERSKI Z
STEIMETZ E
ZETTLER T
RICHTER W
Citation: Di. Westwood et al., ON THE DEVELOPMENT OF INAS ON GAAS(001) AS MEASURED BY REFLECTANCE ANISOTROPY SPECTROSCOPY - CONTINUOUS AND ISLANDED FILMS, Applied surface science, 123, 1998, pp. 347-351
Authors:
ZETTLER JT
PRISTOVSEK M
TREPK T
SHKREBTII A
STEIMETZ E
ZORN M
RICHTER W
Citation: Jt. Zettler et al., RESPONSE OF THE SURFACE DIELECTRIC FUNCTION TO DYNAMIC SURFACE MODIFICATIONS - APPLICATION OF REFLECTANCE ANISOTROPY SPECTROSCOPY AND SPECTROSCOPIC ELLIPSOMETRY, Thin solid films, 313, 1998, pp. 537-543
Authors:
STEIMETZ E
SCHIENLE F
ZETTLER JT
RICHTER W
Citation: E. Steimetz et al., STRANSKI-KRASTANOV FORMATION OF INAS QUANTUM DOTS MONITORED DURING GROWTH BY REFLECTANCE ANISOTROPY SPECTROSCOPY AND SPECTROSCOPIC ELLIPSOMETRY, Journal of crystal growth, 170(1-4), 1997, pp. 208-214
Authors:
STEIMETZ E
ZETTLER JT
RICHTER W
WESTWOOD DI
WOOLF DA
SOBIESIERSKI Z
Citation: E. Steimetz et al., OPTICAL MONITORING OF THE DEVELOPMENT OF INAS QUANTUM DOTS ON GAAS(001) BY REFLECTANCE ANISOTROPY SPECTROSCOPY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 3058-3064
Authors:
STEIMETZ E
ZETTLER JT
SCHIENLE F
TREPK T
WETHKAMP T
RICHTER W
SIEBER I
Citation: E. Steimetz et al., TN SITU MONITORING OF INAS-ON-GAAS QUANTUM-DOT FORMATION IN MOVPE BY REFLECTANCE-ANISOTROPY-SPECTROSCOPY AND ELLIPSOMETRY, Applied surface science, 107, 1996, pp. 203-211
Authors:
HOVEL R
STEIMETZ E
MANNHEIM S
SOMMER V
WOITOK J
FINDERS J
HEIME K
Citation: R. Hovel et al., THE N-TYPE DOPING OF GAAS ALXGA1-XAS AND GROWTH OF 2-DIMENSIONAL ELECTRON-GAS STRUCTURES WITH DEALH-NME(3) AS AL SOURCE/, Journal of crystal growth, 146(1-4), 1995, pp. 515-520
Authors:
HOVEL R
STEIMETZ E
HEIME K
Citation: R. Hovel et al., THE GROWTH OF GAAS ALXGA1-XAS WITH DEALH-NME(3) AS AL SOURCE AND MEASAND DMAAS AS LIQUID AS COMPOUNDS/, Journal of crystal growth, 145(1-4), 1994, pp. 498-504
Risultati:
1-9
|