THE GROWTH OF GAAS ALXGA1-XAS WITH DEALH-NME(3) AS AL SOURCE AND MEASAND DMAAS AS LIQUID AS COMPOUNDS/

We report on the growth of GaAs and AlGaAs with either MEAs (monoethyl arsine) or DMAAs (trisdimethylaminoarsenic) as alternative group V com pounds in combination with the Al source DEAlH-NMe(3) (diethyl-alumini umhydride-trimethylamine adduct) and TEGa (triethylgallium). GaAs/AlGa As layers grown with DEAlH-NMe(3), TEGa and AsH3 show very good electr ical and optical properties. For example, the oxygen and carbon conten t in an Al0.29Ga0.71As layer is lower than the detection limit of the SIMS measurement (O: similar to 10(16) cm(-3); C: content similar to 1 0(15) cm(-3)). First multiple single quantum wells were grown with the Al source in combination with TEGa and AsH3. To enhance the safety of the growth process, experiments with the alternative As precursors DM AAs and MEAs were carried out. Growth studies of GaAs and AlGaAs with DMAAs as As source and TEGa and DEAlH-NMe(3) as group III precursors i ndicated undesired prereactions and make DMAAs unsuitable for the grow th of Al containing layers. Using MEAs instead of AsH3, no indication of prereactions was found. Encouraging electrical and optical properti es were achieved for the growth of GaAs (mu(77) = 39.100 cm(2)/V.s, n( 77) = 7.1 X 10(14) cm(-3)) and AlGaAs (12 K PL FWHM = 11 meV for x(Al) = 0.30). Our results prove that the precursor combination MEAs, TEGa and DEAlH-NMe(3) is suitable for the growth of high quality GaAs/AlGaA s.