Citation: Vi. Sankin et Ia. Stolichnov, ELECTRON-TRANSPORT UNDER WANNIER-STARK LOCALIZATION CONDITIONS IN SILICON-CARBIDE POLYTYPES, Semiconductors, 31(5), 1997, pp. 489-495
Citation: Vi. Sankin et al., STRONG WANIE-STARK LOCALIZATION IN 6H AND 4H SILICON-CARBIDE POLYTYPES, Pis'ma v Zurnal tehniceskoj fiziki, 22(21), 1996, pp. 39-44
Citation: Vi. Sankin et Ia. Stolichnov, WANNIER-STARK RESONANCES UNDER STRONG LOCALIZATION CONDITIONS IN NATURAL SILICON-CARBIDE SUPERLATTICES, JETP letters, 64(2), 1996, pp. 114-119
Citation: Vi. Sankin et Ia. Stolichnov, WANNIER-STARK LOCALIZATION IN A SUPERLATTICE OF HEXAGONAL SILICON-CARBIDE, JETP letters, 59(10), 1994, pp. 744-748