Authors: MOKEROV VG FEDOROV YV GUK AV GALIEV GB STRAKHOV VA YAREMENKO NG

Citation: Vg. Mokerov et al., OPTICAL-PROPERTIES OF SILICON-DOPED (100)GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY, Semiconductors (Woodbury, N.Y.), 32(9), 1998, pp. 950-952

Authors: KARACHEVTSEVA MV IGNATEV AS MOKEROV VG NEMTSEV GZ STRAKHOV VA YAREMENKO NG

Citation: Mv. Karachevtseva et al., TEMPERATURE-DEPENDENCE OF THE PHOTOLUMINESCENCE OF INXGA1-XAS GAAS QUANTUM-WELL STRUCTURES/, Semiconductors, 28(7), 1994, pp. 691-694

Authors: KARACHEVTSEVA MV STRAKHOV VA YAREMENKO NG

Citation: Mv. Karachevtseva et al., TUNNELING-RECOMBINATION CURRENTS IN NONIDEAL INGAASP INP HETEROSTRUCTURES/, Semiconductors, 28(6), 1994, pp. 594-596

Authors: IGNATEV AS KARACHEVTSEVA MV MOKEROV VG NEMTSEV GZ STRAKHOV VA YAREMENKO NG

Citation: As. Ignatev et al., WIDTH OF EXCITON LINE IN THE LOW-TEMPERATURE PHOTOLUMINESCENCE OF INXGA1-XAS GAAS STRUCTURES WITH SINGLE QUANTUM-WELLS/, Semiconductors, 28(1), 1994, pp. 75-79