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Results: 1-10 |
Results: 10
FABRICATION OF HETEROJUNCTION BIPOLAR-TRANSISTORS WITH BURIED SUBCOLLECTOR LAYERS FOR REDUCTION OF BASE-COLLECTOR CAPACITANCE BY MOLECULAR-BEAM EPITAXY REGROWTH
Authors: MICOVIC M NORDQUIST CD LUBYSHEV D MAYER TS MILLER DL STREATER RW SPRINGTHORPE AJ
Citation: M. Micovic et al., FABRICATION OF HETEROJUNCTION BIPOLAR-TRANSISTORS WITH BURIED SUBCOLLECTOR LAYERS FOR REDUCTION OF BASE-COLLECTOR CAPACITANCE BY MOLECULAR-BEAM EPITAXY REGROWTH, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 962-967
GAAS ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH A BASE DOPING 10(20) CM(-3) GROWN BY SOLID-SOURCE MOLECULAR-BEAM EPITAXY USING CBR4/
Authors: MICOVIC M NORDQUIST C LUBYSHEV D MAYER TS MILLER DL STREATER RW SPRINGTHORPE AJ
Citation: M. Micovic et al., GAAS ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH A BASE DOPING 10(20) CM(-3) GROWN BY SOLID-SOURCE MOLECULAR-BEAM EPITAXY USING CBR4/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 972-976
DETERMINATION OF ALXGA(1-X)AS COMPOSITION - THE MBE PERSPECTIVE
Authors: WASILEWSKI ZR DION MM LOCKWOOD DJ POOLE P STREATER RW SPRINGTHORPE AJ
Citation: Zr. Wasilewski et al., DETERMINATION OF ALXGA(1-X)AS COMPOSITION - THE MBE PERSPECTIVE, Journal of crystal growth, 175, 1997, pp. 238-243
IODINE-ASSISTED MOLECULAR-BEAM EPITAXY
Authors: MICOVIC M LUBYSHEV D CAI WZ FLACK F STREATER RW SPRINGTHORPE AJ MILLER DL
Citation: M. Micovic et al., IODINE-ASSISTED MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 175, 1997, pp. 428-434
SETTING LIMITS ON THE ACCURACY OF X-RAY DETERMINATION OF AL CONCENTRATION IN ALGAAS GAAS EPITAXIAL LAYERS/
Authors: BASSIGNANA IC MACQUISTAN DA STREATER RW HILLIER GC PACKWOOD R MOORE V
Citation: Ic. Bassignana et al., SETTING LIMITS ON THE ACCURACY OF X-RAY DETERMINATION OF AL CONCENTRATION IN ALGAAS GAAS EPITAXIAL LAYERS/, Journal of crystal growth, 172(1-2), 1997, pp. 25-36
COMPOSITION OF ALGAAS
Authors: WASILEWSKI ZR DION MM LOCKWOOD DJ POOLE P STREATER RW SPRINGTHORPE AJ
Citation: Zr. Wasilewski et al., COMPOSITION OF ALGAAS, Journal of applied physics, 81(4), 1997, pp. 1683-1694
DEVICE-QUALITY ALGAAS GROWN BY CHEMICAL BEAM EPITAXY
Authors: MOORE WT MANDEVILLE P STREATER RW MINER CJ
Citation: Wt. Moore et al., DEVICE-QUALITY ALGAAS GROWN BY CHEMICAL BEAM EPITAXY, Journal of crystal growth, 164(1-4), 1996, pp. 485-490
IODINE USE IN SOLID-SOURCE ILL-V MOLECULAR-BEAM EPITAXY
Authors: MICOVIC M MILLER DL FLACK F STREATER RW THORPE AJS
Citation: M. Micovic et al., IODINE USE IN SOLID-SOURCE ILL-V MOLECULAR-BEAM EPITAXY, Applied physics letters, 69(18), 1996, pp. 2680-2682
SILICON SPIKES AND IMPURITY ACCUMULATION AT INTERRUPTED GROWTH INTERFACES DURING MOLECULAR-BEAM EPITAXY
Authors: SPRINGTHORPE AJ MOORE WT MAJEED A STREATER RW
Citation: Aj. Springthorpe et al., SILICON SPIKES AND IMPURITY ACCUMULATION AT INTERRUPTED GROWTH INTERFACES DURING MOLECULAR-BEAM EPITAXY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(4), 1993, pp. 1275-1280
STRAIN-INDUCED COMPOSITIONAL SHIFT IN THE GROWTH OF INASYP1-Y ONTO (100) INP BY GAS-SOURCE MOLECULAR-BEAM EPITAXY
Authors: QIU C KRUZELECKY RV THOMPSON DA COMEDI D BALCAITIS G ROBINSON BJ STREATER RW
Citation: C. Qiu et al., STRAIN-INDUCED COMPOSITIONAL SHIFT IN THE GROWTH OF INASYP1-Y ONTO (100) INP BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, Canadian journal of physics, 70(10-11), 1992, pp. 886-892
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