Device quality AlGaAs layers have been grown by CBE using both TMAA an
d DMEAA on 3 inch diameter GaAs substrates. Al0.3Ga0.7As layers with o
xygen concentrations as low as 1 x 10(16) cm(-3) have been obtained fo
r undoped layers using aluminum sources from different suppliers. Low
oxygen levels (< 5 x 10(16) cm(-3)) have also been achieved for Sn- an
d carbon-doped AlGaAs. High power 980 nm InGaAs quantum well lasers ha
ve been prepared with efficiencies as high as 1.0 W/A and thresholds c
omparable to the best values obtained for MBE or MOCVD grown material.
CBE grown heterojunction bipolar transistor structures have been proc
essed into digital ICs that operate to speeds above 10 Gb/s. These dev
ices show current gains of 50 to 80 for HBTs with base sheet resistanc
es of 250 Omega/rectangle The low surface defect densities (< 10 cm(-2
) for defects larger than 0.5 mu m) that are obtainable in the CBE pro
cess present a clear advantage for device manufacturing. A simple meta
lorganic cell design for the alanes is described that leads to reprodu
cible and uniform alloy compositions.