Authors:
HEINRICH W
GERDES J
SCHMUCKLE FJ
RHEINFELDER C
STROHM K
Citation: W. Heinrich et al., COPLANAR PASSIVE ELEMENTS ON SI SUBSTRATE FOR FREQUENCIES UP TO 110 GHZ, IEEE transactions on microwave theory and techniques, 46(5), 1998, pp. 709-712
Citation: H. Jorke et al., FORWARD-BIAS CHARACTERISTICS OF SI BIPOLAR JUNCTIONS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURES, Applied physics letters, 63(17), 1993, pp. 2408-2410