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Results: 1-8 |
Results: 8

Authors: STUPP H BOYEN HG GANTNER G OELHAFEN P
Citation: H. Stupp et al., TIME-RESOLVED VALENCE-BAND PHOTOELECTRON-SPECTROSCOPY OF LIQUID AUSN, Journal of physics. Condensed matter, 8(47), 1996, pp. 9373-9377

Authors: FRANCZ G KANIA P GANTNER G STUPP H OELHAFEN P
Citation: G. Francz et al., PHOTOELECTRON-SPECTROSCOPY STUDY OF NATURAL (100)DIAMOND, (110)DIAMOND, (111)DIAMOND AND CVD DIAMOND SURFACES, Physica status solidi. a, Applied research, 154(1), 1996, pp. 91-108

Authors: BOYEN HG COSSYFAVRE A GANTNER G STUPP H LAUINGER C OELHAFEN P
Citation: Hg. Boyen et al., LOW-TEMPERATURE AMORPHIZATION AT INTERFACES IN LAYERED STRUCTURES - EVIDENCE FOR A LOW-DIMENSIONAL PEIERLS SYSTEM, Journal of non-crystalline solids, 207, 1996, pp. 776-780

Authors: BOYEN HG INDLEKOFER G GANTNER G STUPP H COSSYFAVRE A OELHAFEN P
Citation: Hg. Boyen et al., INTERMIXING AT AU-IN INTERFACES AS STUDIED BY PHOTOELECTRON-SPECTROSCOPY, Physical review. B, Condensed matter, 51(23), 1995, pp. 17096-17099

Authors: HORNUNG M RUZZU A SCHLAGER HG STUPP H VONLOHNEYSEN H
Citation: M. Hornung et al., METAL-INSULATOR-TRANSITION IN UNCOMPENSATED SIP IN THE PRESENCE OF A MAGNETIC-FIELD, Europhysics letters, 28(1), 1994, pp. 43-47

Authors: STUPP H HORNUNG M LAKNER M MADEL O VONLOHNEYSEN H
Citation: H. Stupp et al., CRITICAL-BEHAVIOR OF THE CONDUCTIVITY OF SI-P NEAR THE METAL-INSULATOR-TRANSITION - REPLY, Physical review letters, 73(26), 1994, pp. 3601-3601

Authors: STUPP H HORNUNG M LAKNER M MADEL O
Citation: H. Stupp et al., CRITICAL-BEHAVIOR OF SI-P AT THE METAL-INSULATOR-TRANSITION - REPLY, Physical review letters, 72(13), 1994, pp. 2122-2122

Authors: STUPP H HORNUNG M LAKNER M MADEL O VONLOHNEYSEN H
Citation: H. Stupp et al., POSSIBLE SOLUTION OF THE CONDUCTIVITY EXPONENT PUZZLE FOR THE METAL-INSULATOR-TRANSITION IN HEAVILY-DOPED UNCOMPENSATED SEMICONDUCTORS, Physical review letters, 71(16), 1993, pp. 2634-2637
Risultati: 1-8 |