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INVESTIGATION OF A PD-AU COMPLEX IN N-TYPE SILICON WITH DLTFS TECHNIQUES
Authors: SUDJADI U WEISS S BOCK A KASSING R
Citation: U. Sudjadi et al., INVESTIGATION OF A PD-AU COMPLEX IN N-TYPE SILICON WITH DLTFS TECHNIQUES, Physica status solidi. a, Applied research, 149(2), 1995, pp. 649-658
INVESTIGATIONS ON DEEP TRAPS IN GAAS AND (ALXGA1-X)AS BULK LAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY USING THE NEW ALTERNATIVE ARSENIC PRECURSOR DIETHYL-TERT-BUTYLARSIN
Authors: SPIKA Z ZIMMERMANN G STOLZ W GOBEL EO GIMMNICH P LORBERTH J GREILING A SALZMANN A WEISS S SUDJADI U BOCK A KASSING R
Citation: Z. Spika et al., INVESTIGATIONS ON DEEP TRAPS IN GAAS AND (ALXGA1-X)AS BULK LAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY USING THE NEW ALTERNATIVE ARSENIC PRECURSOR DIETHYL-TERT-BUTYLARSIN, Journal of crystal growth, 146(1-4), 1995, pp. 521-526
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