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Results:
1-12
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Results: 12
Authors:
MIZUSHIMA I
MURAKOSHI A
SUGURO K
AOKI N
YAMAUCHI J
Citation: I. Mizushima et al., ULTRA-HIGH DOSE BORON ION-IMPLANTATION - SUPERSATURATION OF BORON ANDITS APPLICATION, Materials chemistry and physics, 54(1-3), 1998, pp. 54-59
Authors:
SHIMOOKA Y
IIJIMA T
NAKAMURA S
SUGURO K
Citation: Y. Shimooka et al., CORRELATION OF W-SI-N FILM MICROSTRUCTURE WITH BARRIER PERFORMANCE AGAINST CU DIFFUSION, JPN J A P 1, 36(3B), 1997, pp. 1589-1592
Authors:
NAKAJIMA K
AKASAKA Y
MIYANO K
TAKAHASHI M
SUEHIRO S
SUGURO K
Citation: K. Nakajima et al., FORMATION MECHANISM OF ULTRATHIN WSIN BARRIER-LAYER IN A W WNX/SI SYSTEM/, Applied surface science, 117, 1997, pp. 312-316
Authors:
MINAMIHABA G
IIJIMA T
SHIMOOKA Y
TAMURA H
KAWANOUE T
HIRABAYASHI H
SAKURAI N
OHKAWA J
OBARA T
EGAWA H
IDAKA T
KUBOTA T
SHIMIZU T
KOYAMA M
OOSHIMA J
SUGURO K
Citation: G. Minamihaba et al., DOUBLE-LEVEL CU INLAID INTERCONNECTS WITH SIMULTANEOUSLY FILLED VIA PLUGS, JPN J A P 1, 35(2B), 1996, pp. 1107-1110
Authors:
IIJIMA T
SHIMOOKA Y
SUGURO K
Citation: T. Iijima et al., INLAID CU INTERCONNECTS EMPLOYING TI-SI-N BARRIER METAL FOR ULSI APPLICATIONS, IEICE transactions on electronics, E79C(4), 1996, pp. 568-572
Authors:
AKASAKA Y
SUEHIRO S
NAKAJIMA K
NAKASUGI T
MIYANO K
KASAI K
OYAMATSU H
KINUGAWA M
TAKAGI MT
AGAWA K
MATSUOKA F
KAKUMU M
SUGURO K
Citation: Y. Akasaka et al., LOW-RESISTIVITY POLY-METAL GATE ELECTRODE DURABLE FOR HIGH-TEMPERATURE PROCESSING, I.E.E.E. transactions on electron devices, 43(11), 1996, pp. 1864-1869
Authors:
IIJIMA T
SHIMOOKA Y
SUGURO K
Citation: T. Iijima et al., AN AMORPHOUS TI-SI-N DIFFUSION BARRIER LAYER FOR CU INTERCONNECTIONS, Electronics & communications in Japan. Part 2, Electronics, 78(12), 1995, pp. 67-74
Authors:
NAKASAKI Y
MINAMIHABA G
SUGURO K
ITOW H
Citation: Y. Nakasaki et al., INTERFACIAL ENERGY CALCULATION AT INTERCONNECT-METAL BARRIER-METAL INTERFACES FOR GRAIN-ORIENTATION CONTROL/, Journal of applied physics, 77(6), 1995, pp. 2454-2461
Authors:
MORIMOTO T
OHGURO T
MOMOSE HS
IINUMA T
KUNISHIMA I
SUGURO K
KATAKABE I
NAKAJIMA H
TSUCHIAKI M
ONO M
KATSUMATA Y
IWAI H
Citation: T. Morimoto et al., SELF-ALIGNED NICKEL-MONO-SILICIDE TECHNOLOGY FOR HIGH-SPEED DEEP-SUBMICROMETER LOGIC CMOS ULSI, I.E.E.E. transactions on electron devices, 42(5), 1995, pp. 915-922
Authors:
TAKASOH M
MIZOTA A
ASANAGI K
SUGURO K
KOBAYASHI K
MOMIUCHI M
KOMIYAMA T
Citation: M. Takasoh et al., INTERNAL CONTACT SCLEROSTOMY WITH ERBIUM LASER AND INTEROCULAR FIBERSCOPE, Investigative ophthalmology & visual science, 35(4), 1994, pp. 2066-2066
Authors:
WADA J
SUGURO K
HAYASAKA N
OKANO H
Citation: J. Wada et al., FORMATION OF SINGLE-CRYSTAL AL INTERCONNECTION BY IN-SITU ANNEALING, JPN J A P 1, 32(6B), 1993, pp. 3094-3098
Authors:
ITOW H
NAKASAKI Y
MINAMIHABA G
SUGURO K
OKANO H
Citation: H. Itow et al., SELF-ALIGNED PASSIVATION ON COPPER INTERCONNECTION DURABILITY AGAINSTOXIDIZING AMBIENT ANNEALING, Applied physics letters, 63(7), 1993, pp. 934-936
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1-12
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