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Results:
1-10
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Results: 10
Authors:
TARUTANI M
SUITA M
HORIKAWA T
TANIMURA J
KAWAHARA T
YAMAMURA M
SUMITANI H
ONO K
Citation: M. Tarutani et al., MECHANISMS OF X-RAY RADIATION-INDUCED DAMAGE IN (BA,SR)TIO3 CAPACITORS, JPN J A P 1, 37(3B), 1998, pp. 1328-1331
Authors:
SUMITANI H
WATANABE H
ITOGA K
HIFUMI T
SUITA M
OGUSHI N
MIZUSAWA N
UDA K
Citation: H. Sumitani et al., CRITICAL DIMENSION CONTROL IN SYNCHROTRON-RADIATION LITHOGRAPHY USINGA NEGATIVE-TONE CHEMICAL AMPLIFICATION RESIST, JPN J A P 1, 36(12B), 1997, pp. 7591-7596
Authors:
OHTSUKA KI
SUITA M
ENDOH Y
IMAIZUMI M
ISU T
NUNOSHITA M
Citation: Ki. Ohtsuka et al., ELECTRICAL CHARACTERIZATION OF AU P-ZNSE STRUCTURE/, JPN J A P 1, 35(12A), 1996, pp. 5995-5997
Authors:
IMAIZUMI M
ENDOH Y
SUITA M
SUGIMOTO H
OHTSUKA K
ISU T
OZEKI T
Citation: M. Imaizumi et al., GAS-SOURCE MOLECULAR-BEAM EPITAXY OF MGZNSSE FOR FABRICATING BLUE GREEN LASER-DIODES/, Journal of crystal growth, 169(2), 1996, pp. 293-298
Authors:
IMAIZUMI M
KUROKI H
ENDOH Y
SUITA M
OHTSUKA K
ISU T
NAMIZAKI H
NUNOSHITA M
Citation: M. Imaizumi et al., LOW-RESISTIVITY P-TYPE ZNSE, ZNSSE AND MGZNSSE GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 159(1-4), 1996, pp. 257-260
Authors:
IMAIZUMI M
ENDOH Y
SUITA M
OHTSUKA K
ISU T
NAMIZAKI H
NUNOSHITA M
Citation: M. Imaizumi et al., ZNCDSE-MGZNSSE LASER-DIODES FABRICATED BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 159(1-4), 1996, pp. 1167-1167
Authors:
ENDOH Y
TANIMURA J
IMAIZUMI M
SUITA M
OHTSUKA K
ISU T
NUNOSHITA M
Citation: Y. Endoh et al., CRYSTALLINE DEFECTS IN ZNSE LAYERS GROWN BY GAS-SOURCE MOLECULAR-BEAMEPITAXY, Journal of crystal growth, 154(1-2), 1995, pp. 41-46
Authors:
IMAIZUMI M
ENDOH Y
SUITA M
OHTSUKA KI
ISU T
NUNOSHITA M
Citation: M. Imaizumi et al., GROWTH OF ZNS AND ZNSSE BY GAS-SOURCE MOLECULAR-BEAM EPITAXY USING HYDRIDE GROUP-VI SOURCES, Journal of crystal growth, 150(1-4), 1995, pp. 707-711
Authors:
IMAIZUMI M
ENDOH Y
OHTSUKA K
SUITA M
ISU T
NUNOSHITA M
Citation: M. Imaizumi et al., BLUE-LIGHT-EMITTING LASER-DIODES BASED ON ZNSE ZNCDSE STRUCTURE GROWNBY GAS-SOURCE MOLECULAR-BEAM EPITAXY/, JPN J A P 2, 33(1A), 1994, pp. 120000013-120000019
Authors:
OHTSUKA K
IMAIZUMI M
ENDOH Y
SUITA M
ISU T
NUNOSHITA M
Citation: K. Ohtsuka et al., ELECTRICAL CHARACTERIZATION OF ZNSE EPITAXIAL LAYER REACTIVE-ION-ETCHED BY A GAS-MIXTURE OF ETHANE AND HYDROGEN, Journal of applied physics, 75(12), 1994, pp. 8231-8233
Risultati:
1-10
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