LOW-RESISTIVITY P-TYPE ZNSE, ZNSSE AND MGZNSSE GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

Active-nitrogen-doped p-ZnSe, ZnSSe and MgZnSSe layers are successfull y grown by GSMBE employing group VI hydride sources. We performed a SI MS analysis for the p-ZnSe layers and a hydrogen -concentration of abo ut 1 X 10(18) cm(-3) was detected. With regard to the nitrogen activat ion as accepters, data of GSMBE-grown p-ZnSe are not different cm from those of solid-source MBE. A p-ZnSe layer with a resistivity of 1 Ome ga . cm and a net acceptor concentration of 1 x 10(18) cm(-3) and a p- MgxZnSySe layer(x = 0.10 and y = 0.15) with a net acceptor concentrati on of 1.8 x 10(17) cm(-3) is obtained. These values are comparable to the best values ever attained by various growth methods. We conclude t hat incorporated hydrogen has no significant effect on the electrical properties of GSMBE-grown p-ZnSe layers.