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Results:
1-8
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Results: 8
Authors:
SUKACH GA
OLEKSENKO PF
BOGOSLOVSKAYA AB
BILINETS YY
KABATSII VN
Citation: Ga. Sukach et al., THERMAL AND AUGER PROCESSES IN P-N-JUNCTIONS BASED ON GAINAS INAS ANDINASSBP/INAS HETEROSTRUCTURES/, Technical physics, 42(9), 1997, pp. 1044-1047
Authors:
SUKACH GA
Citation: Ga. Sukach, LASER-STIMULATED DISPLACEMENT OF THE P-N-JUNCTION BOUNDARY IN DIRECT-GAP GAASP STRUCTURES, Semiconductors, 31(6), 1997, pp. 645-648
Authors:
SVECHNIKOV SV
OLEKSENKO PP
SUKACH GA
SMERTENKO PS
VLASKINA SI
GROMASHEVSKI VL
Citation: Sv. Svechnikov et al., RADIATION SPECTRA IN GAN-BASED LEDS UNDER THERMAL-INJECTION PROCESSES, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 319-321
Authors:
SUKACH GA
Citation: Ga. Sukach, RADIATION-INDUCED CONVERSION OF RADIATIVE EXCITON COMPLEXES ASSOCIATED WITH NITROGEN IN P-N-STRUCTURES BASED ON GAP-N, Semiconductors, 30(7), 1996, pp. 618-620
Authors:
KOLCHANOVA NM
POPOV AA
SUKACH GA
BOGOSLOVSKAYA AB
Citation: Nm. Kolchanova et al., THERMAL-PROCESSES IN GAINASSB-BASED LIGHT-EMITTING-DIODE (LED) HETEROSTRUCTURES, Semiconductors, 28(12), 1994, pp. 1137-1140
Authors:
BOGOSLOVSKAYA AB
KOLCHANOVA NM
MANYAKHIN FI
POPOV AA
SUKACH GA
Citation: Ab. Bogoslovskaya et al., IMPURITY DISTRIBUTION NEAR A P-GAINASSB P-GAALASSB HETEROJUNCTION, Semiconductors, 27(9), 1993, pp. 870-871
Authors:
SUKACH GA
Citation: Ga. Sukach, EFFECT OF NEUTRON BOMBARDMENT ON THE DISPLACEMENT OF THE P-N-JUNCTIONINTERFACE IN GAASP-ZN LIGHT-EMITTING-DIODES, Semiconductors, 27(5), 1993, pp. 461-462
Authors:
KOLCHANOVA NM
POPOV AA
BOGOSLOVSKAYA AB
SUKACH GA
Citation: Nm. Kolchanova et al., HEAT-UP IN GAINASSB-BASED HETEROSTRUCTURE S, Pis'ma v Zurnal tehniceskoj fiziki, 19(21), 1993, pp. 61-65
Risultati:
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