Authors:
TSUCHIYA H
SUNABA K
MINAMI M
SUEMASU T
HASEGAWA F
Citation: H. Tsuchiya et al., INFLUENCE OF AS AUTODOPING FROM GAAS SUBSTRATES ON THICK CUBIC GAN GROWTH BY HALIDE VAPOR-PHASE EPITAXY, JPN J A P 2, 37(5B), 1998, pp. 568-570
Citation: H. Tsuchiya et al., GROWTH CONDITION DEPENDENCE OF GAN CRYSTAL-STRUCTURE ON (001)GAAS BY HYDRIDE VAPOR-PHASE EPITAXY, Journal of crystal growth, 190, 1998, pp. 395-400