H. Tsuchiya et al., GROWTH CONDITION DEPENDENCE OF GAN CRYSTAL-STRUCTURE ON (001)GAAS BY HYDRIDE VAPOR-PHASE EPITAXY, Journal of crystal growth, 190, 1998, pp. 395-400
In order to understand growth feature of GaN on (0 0 1)GaAs, GaN layer
s were grown by hydride vapor-phase epitaxy (HVPE) under various growt
h conditions. Hexagonal GaN has dominantly grown even on (0 0 1)GaAs f
or the substrate temperatures below 800 degrees C even though the buff
er layer had an almost pure cubic structure. Hexagonal component of th
e grown layer also greatly depends on the V/III ratio of the supplied
gases as well as quality of buffer layer, and it was less than 1% for
a good cubic buffer layer and an optimum V/III ratio. (C) 1998 Elsevie
r Science B.V. All rights reserved.