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Results: 1-25 | 26-50 | 51-60
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POLARITY RELATED PROBLEMS IN GROWTH OF GAN HOMOEPITAXIAL LAYERS
Authors: LESZCZYNSKI M PRYSTAWKO P SLIWINSKI A SUSKI T LITWINSTASZEWSKA E POROWSKI S PASZKIEWICZ R TLACZALA M BEAUMONT B GIBART P BARSKI A LANGER R KNAP W FRAYSSINET E
Citation: M. Leszczynski et al., POLARITY RELATED PROBLEMS IN GROWTH OF GAN HOMOEPITAXIAL LAYERS, Acta Physica Polonica. A, 94(3), 1998, pp. 427-430
MECHANISMS OF YELLOW AND RED PHOTOLUMINESCENCE IN WURTZITE AND CUBIC GAN
Authors: GODLEWSKI M SUSKI T GRZEGORY I POROWSKI S LANGER R BARSKI A BERGMAN JP MONEMAR B GOLDYS EM PHILLIPS MR
Citation: M. Godlewski et al., MECHANISMS OF YELLOW AND RED PHOTOLUMINESCENCE IN WURTZITE AND CUBIC GAN, Acta Physica Polonica. A, 94(2), 1998, pp. 326-330
CUBIC INN INCLUSIONS - PROPOSED EXPLANATION FOR THE SMALL PRESSURE-SHIFT ANOMALY OF THE LUMINESCENCE IN INGAN-BASED QUANTUM-WELLS
Authors: WEINSTEIN BA PERLIN P CHRISTENSEN NE GORCZYCA I IOTA V SUSKI T WISNIEWSKI P OSINSKI M ELISEEV PG
Citation: Ba. Weinstein et al., CUBIC INN INCLUSIONS - PROPOSED EXPLANATION FOR THE SMALL PRESSURE-SHIFT ANOMALY OF THE LUMINESCENCE IN INGAN-BASED QUANTUM-WELLS, Solid state communications, 106(9), 1998, pp. 567-571
OPTICAL ACTIVATION AND DIFFUSIVITY OF ION-IMPLANTED ZN ACCEPTORS IN GAN UNDER HIGH-PRESSURE, HIGH-TEMPERATURE ANNEALING
Authors: SUSKI T JUN J LESZCZYNSKI M TEISSEYRE H STRITE S ROCKETT A PELZMANN A KAMP M EBELING KJ
Citation: T. Suski et al., OPTICAL ACTIVATION AND DIFFUSIVITY OF ION-IMPLANTED ZN ACCEPTORS IN GAN UNDER HIGH-PRESSURE, HIGH-TEMPERATURE ANNEALING, Journal of applied physics, 84(2), 1998, pp. 1155-1157
INVESTIGATION OF OPTICALLY-ACTIVE E-1 TRANSVERSAL OPTIC PHONON MODES IN ALXGA1-XN LAYERS DEPOSITED ON 6H-SIC SUBSTRATES USING INFRARED REFLECTANCE
Authors: WISNIEWSKI P KNAP W MALZAC JP CAMASSEL J BREMSER MD DAVIS RF SUSKI T
Citation: P. Wisniewski et al., INVESTIGATION OF OPTICALLY-ACTIVE E-1 TRANSVERSAL OPTIC PHONON MODES IN ALXGA1-XN LAYERS DEPOSITED ON 6H-SIC SUBSTRATES USING INFRARED REFLECTANCE, Applied physics letters, 73(13), 1998, pp. 1760-1762
HIGH-RESISTIVITY GAN SINGLE-CRYSTALLINE SUBSTRATES
Authors: POROWSKI S BOCKOWSKI M LUCZNIK B GRZEGORY I WROBLEWSKI M TEISSEYRE H LESZCZYNSKI M LITWINSTASZEWSKA E SUSKI T TRAUTMAN P PAKULA K BARANOWSKI J
Citation: S. Porowski et al., HIGH-RESISTIVITY GAN SINGLE-CRYSTALLINE SUBSTRATES, Acta Physica Polonica. A, 92(5), 1997, pp. 958-962
OPTICAL AND ELECTRICAL-PROPERTIES OF HIGH-TEMPERATURE ANNEALED HETEROEPITAXIAL GAN-MG LAYERS
Authors: WOJDAK M BARANOWSKI JM SUCHANEK B PAKULA K JUN J SUSKI T
Citation: M. Wojdak et al., OPTICAL AND ELECTRICAL-PROPERTIES OF HIGH-TEMPERATURE ANNEALED HETEROEPITAXIAL GAN-MG LAYERS, Acta Physica Polonica. A, 92(5), 1997, pp. 1059-1062
INFLUENCE OF FREE-ELECTRONS AND POINT-DEFECTS ON THE LATTICE-PARAMETERS AND THERMAL-EXPANSION OF GALLIUM NITRIDE
Authors: LESZCZYNSKI M TEISSEYRE H SUSKI T GRZEGORY I BOCKOWSKI M JUN J POROWSKI S BAKMISIUK J DOMAGALA J
Citation: M. Leszczynski et al., INFLUENCE OF FREE-ELECTRONS AND POINT-DEFECTS ON THE LATTICE-PARAMETERS AND THERMAL-EXPANSION OF GALLIUM NITRIDE, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 19(2-4), 1997, pp. 585-590
HOMOEPITAXIAL LAYERS OF GALLIUM NITRIDE GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
Authors: TEISSEYRE H LESZCZYNSKI M SUSKI T GRZEGORY I BOCKOWSKI M JUN J POROWSKI S PAKULA K ROBERT JL BEAUMONT B GIBART P VAILLE M FAURIE JP
Citation: H. Teisseyre et al., HOMOEPITAXIAL LAYERS OF GALLIUM NITRIDE GROWN BY METALORGANIC VAPOR-PHASE EPITAXY, Semiconductor science and technology, 12(2), 1997, pp. 240-243
X-RAY-ABSORPTION, GLANCING-ANGLE REFLECTIVITY, AND THEORETICAL-STUDY OF THE N K-EDGE AND GA M(2,3)-EDGE SPECTRA IN GAN
Authors: LAMBRECHT WRL RASHKEEV SN SEGALL B LAWNICZAKJABLONSKA K SUSKI T GULLIKSON EM UNDERWOOD JH PERERA RCC RIFE JC GRZEGORY I POROWSKI S WICKENDEN DK
Citation: Wrl. Lambrecht et al., X-RAY-ABSORPTION, GLANCING-ANGLE REFLECTIVITY, AND THEORETICAL-STUDY OF THE N K-EDGE AND GA M(2,3)-EDGE SPECTRA IN GAN, Physical review. B, Condensed matter, 55(4), 1997, pp. 2612-2622
OBSERVATION OF NATIVE GA VACANCIES IN GAN BY POSITRON-ANNIHILATION
Authors: SAARINEN K LAINE T KUISMA S NISSILA J HAUTOJARVI P DOBRZYNSKI L BARANOWSKI JM PAKULA K STEPNIEWSKI R WOJDAK M WYSMOLEK A SUSKI T LESZCZYNSKI M GRZEGORY I POROWSKI S
Citation: K. Saarinen et al., OBSERVATION OF NATIVE GA VACANCIES IN GAN BY POSITRON-ANNIHILATION, Physical review letters, 79(16), 1997, pp. 3030-3033
PRESSURE-INDUCED DEEP GAP-STATE OF OXYGEN IN GAN
Authors: WETZEL C SUSKI T AGER JW WEBER ER HALLER EE FISCHER S MEYER BK MOLNAR RJ PERLIN P
Citation: C. Wetzel et al., PRESSURE-INDUCED DEEP GAP-STATE OF OXYGEN IN GAN, Physical review letters, 78(20), 1997, pp. 3923-3926
INFLUENCE OF PRESSURE ON PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE INGAN INGAN/ALGAN QUANTUM-WELLS/
Authors: PERLIN P IOTA V WEINSTEIN BA WISNIEWSKI P SUSKI T ELISEEV PG OSINSKI M
Citation: P. Perlin et al., INFLUENCE OF PRESSURE ON PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE INGAN INGAN/ALGAN QUANTUM-WELLS/, Applied physics letters, 70(22), 1997, pp. 2993-2995
ANISOTROPY OF THE NITROGEN CONDUCTION STATES IN THE GROUP-III NITRIDES STUDIED BY POLARIZED X-RAY-ABSORPTION
Authors: LAWNICZAKJABLONSKA K SUSKI T LILIENTALWEBER Z GULLIKSON EM UNDERWOOD JH PERERA RCC DRUMMOND TJ
Citation: K. Lawniczakjablonska et al., ANISOTROPY OF THE NITROGEN CONDUCTION STATES IN THE GROUP-III NITRIDES STUDIED BY POLARIZED X-RAY-ABSORPTION, Applied physics letters, 70(20), 1997, pp. 2711-2713
THERMAL-EXPANSION OF GAN BULK CRYSTALS AND HOMOEPITAXIAL LAYERS
Authors: LESZCZYNSKI M TEISSEYRE H SUSKI T GRZEGORY I BOCKOWSKI M JUN J PALOSZ B POROWSKI S PAKULA K BARANOWSKI JM BARSKI A
Citation: M. Leszczynski et al., THERMAL-EXPANSION OF GAN BULK CRYSTALS AND HOMOEPITAXIAL LAYERS, Acta Physica Polonica. A, 90(5), 1996, pp. 887-890
2-ELECTRON DX STATE IN CDTE-IN
Authors: SKIERBISZEWSKI C WISNIEWSKI P LITWINSTASZEWSKA E SUSKI T WILAMOWSKI Z ZAKRZEWSKI AK KARCZEWSKI G JANTSCH W
Citation: C. Skierbiszewski et al., 2-ELECTRON DX STATE IN CDTE-IN, Acta Physica Polonica. A, 90(5), 1996, pp. 927-930
METAL-INSULATOR-TRANSITION IN GAN CRYSTALS
Authors: PERLIN P KNAP W CAMASSEL J POLIAN A CHERVIN JC SUSKI T GRZEGORY I POROWSKI S
Citation: P. Perlin et al., METAL-INSULATOR-TRANSITION IN GAN CRYSTALS, Physica status solidi. b, Basic research, 198(1), 1996, pp. 223-233
PRESSURE AND TIME-RESOLVED PHOTOLUMINESCENCE STUDIES OF MG-DOPED AND UNDOPED GAN
Authors: TEISSEYRE H KOZANKIEWICZ B LESZCZYNSKI M GRZEGORY I SUSKI T BOCKOWSKI M POROWSKI S PAKULA K MENSZ PM BHAT IB
Citation: H. Teisseyre et al., PRESSURE AND TIME-RESOLVED PHOTOLUMINESCENCE STUDIES OF MG-DOPED AND UNDOPED GAN, Physica status solidi. b, Basic research, 198(1), 1996, pp. 235-241
SI IN GAN - ON THE NATURE OF THE BACKGROUND DONOR
Authors: WETZEL C CHEN AL SUSKI T AGER JW WALUKIEWICZ W
Citation: C. Wetzel et al., SI IN GAN - ON THE NATURE OF THE BACKGROUND DONOR, Physica status solidi. b, Basic research, 198(1), 1996, pp. 243-249
STRAIN-RELATED PHENOMENA IN GAN THIN-FILMS
Authors: KISIELOWSKI C KRUGER J RUVIMOV S SUSKI T AGER JW JONES E LILIENTALWEBER Z RUBIN M WEBER ER BREMSER MD DAVIS RF
Citation: C. Kisielowski et al., STRAIN-RELATED PHENOMENA IN GAN THIN-FILMS, Physical review. B, Condensed matter, 54(24), 1996, pp. 17745-17753
CARRIER LOCALIZATION OF AS-GROWN N-TYPE GALLIUM NITRIDE UNDER LARGE HYDROSTATIC-PRESSURE
Authors: WETZEL C WALUKIEWICZ W HALLER EE AGER J GRZEGORY I POROWSKI S SUSKI T
Citation: C. Wetzel et al., CARRIER LOCALIZATION OF AS-GROWN N-TYPE GALLIUM NITRIDE UNDER LARGE HYDROSTATIC-PRESSURE, Physical review. B, Condensed matter, 53(3), 1996, pp. 1322-1326
MOBILITY AND QUANTUM LIFETIME IN A GAAS ALGAAS HETEROSTRUCTURE - TUNING OF THE REMOTE-CHARGE CORRELATIONS/
Authors: WISNIEWSKI P SUSKI T LITWINSTASZEWSKA E BRUNTHALER G KOHLER K
Citation: P. Wisniewski et al., MOBILITY AND QUANTUM LIFETIME IN A GAAS ALGAAS HETEROSTRUCTURE - TUNING OF THE REMOTE-CHARGE CORRELATIONS/, Surface science, 362(1-3), 1996, pp. 579-582
INFLUENCE OF SPATIAL DOPING CORRELATION ON SCATTERING TIMES STUDIED IN GATED AND UNGATED GAAS ALGAAS QUANTUM-WELLS UNDER HYDROSTATIC-PRESSURE/
Authors: BRUNTHALER G PENN C SUSKI T WISNIEWSKI P LITWINSTASZEWSKA E KOHLER K
Citation: G. Brunthaler et al., INFLUENCE OF SPATIAL DOPING CORRELATION ON SCATTERING TIMES STUDIED IN GATED AND UNGATED GAAS ALGAAS QUANTUM-WELLS UNDER HYDROSTATIC-PRESSURE/, Solid-state electronics, 40(1-8), 1996, pp. 105-108
THE MICROSTRUCTURE OF GALLIUM NITRIDE MONOCRYSTALS GROWN AT HIGH-PRESSURE
Authors: LESZCZYNSKI M GRZEGORY I TEISSEYRE H SUSKI T BOCKOWSKI M JUN J BARANOWSKI JM POROWSKI S DOMAGALA J
Citation: M. Leszczynski et al., THE MICROSTRUCTURE OF GALLIUM NITRIDE MONOCRYSTALS GROWN AT HIGH-PRESSURE, Journal of crystal growth, 169(2), 1996, pp. 235-242
SPATIAL CORRELATIONS OF IN-DONOR CHARGES IN CDTE LAYERS
Authors: SUSKI T WISNIEWSKI P LITWINSTASZEWSKA E WASIK D PRZYBYTEK J BAJ M KARCZEWSKI G WOJTOWICZ T ZAKRZEWSKI A KOSSUT J
Citation: T. Suski et al., SPATIAL CORRELATIONS OF IN-DONOR CHARGES IN CDTE LAYERS, Journal of crystal growth, 159(1-4), 1996, pp. 380-383
Risultati: 1-25 | 26-50 | 51-60