Authors: HOFLER A FEUDEL T STRECKER N FICHTNER W STEGEMANN KH SYHRE H DALLMANN G

Citation: A. Hofler et al., A TECHNOLOGY ORIENTED MODEL FOR TRANSIENT DIFFUSION AND ACTIVATION OFBORON IN SILICON, Journal of applied physics, 78(6), 1995, pp. 3671-3679

Authors: BEYER R BURGHARDT H PROSCH G THOMAS E REICH R GRAMBOLE D HERRMANN F WEIDNER G SYHRE H DITTMAR K

Citation: R. Beyer et al., A STUDY OF THE COMPOSITIONAL STRUCTURE AND ELECTRICAL BEHAVIOR OF THIN SILICON OXYNITRIDE LAYERS PREPARED BY RAPID THERMAL-PROCESSING, Physica status solidi. a, Applied research, 145(2), 1994, pp. 447-452