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Results:
1-7
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Results: 7
Authors:
Saddow, SE
Schattner, TE
Brown, J
Grazulis, L
Mahalingam, K
Landis, G
Bertke, R
Mitchel, WC
Citation: Se. Saddow et al., Effects of substrate surface preparation on chemical vapor deposition growth of 4H-SiC epitaxial layers, J ELEC MAT, 30(3), 2001, pp. 228-234
Authors:
Sankin, I
Casady, JB
Dufrene, JB
Draper, WA
Kretchmer, J
Vandersand, J
Kumar, V
Mazzola, MS
Saddow, SE
Citation: I. Sankin et al., On development of 6H-SiC LDMOS transistors using silane-ambient implant anneal, SOL ST ELEC, 45(9), 2001, pp. 1653-1657
Authors:
Roe, KJ
Katulka, G
Kolodzey, J
Saddow, SE
Jacobson, D
Citation: Kj. Roe et al., Silicon carbide and silicon carbide : germanium heterostructure bipolar transistors, APPL PHYS L, 78(14), 2001, pp. 2073-2075
Authors:
Mynbaeva, M
Saddow, SE
Melnychuk, G
Nikitina, I
Scheglov, M
Sitnikova, A
Kuznetsov, N
Mynbaev, K
Dmitriev, V
Citation: M. Mynbaeva et al., Chemical vapor deposition of 4H-SiC epitaxial layers on porous SiC substrates, APPL PHYS L, 78(1), 2001, pp. 117-119
Authors:
Saddow, SE
Schattner, TE
Shamsuzzoha, M
Rendakova, SV
Dmitriev, VA
Citation: Se. Saddow et al., TEM investigation of silicon carbide wafers with reduced micropipe density, J ELEC MAT, 29(3), 2000, pp. 364-367
Authors:
Mazzola, MS
Saddow, SE
Schoner, A
Citation: Ms. Mazzola et al., Close compensation of 6H and 4H silicon carbide by silicon-to-carbon ratiocontrol, MAT SCI E B, 61-2, 1999, pp. 155-157
Authors:
Saddow, SE
Mazzola, MS
Rendakova, SV
Dmitriev, VA
Citation: Se. Saddow et al., Silicon carbide CVD homoepitaxy on wafers with reduced micropipe density, MAT SCI E B, 61-2, 1999, pp. 158-160
Risultati:
1-7
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