AAAAAA

   
Results: 1-8 |
Results: 8
Determination of processing damage in thin polycrystalline Ir films using Bragg-peak fringe analysis
Authors: Saenger, KL Noyan, IC
Citation: Kl. Saenger et Ic. Noyan, Determination of processing damage in thin polycrystalline Ir films using Bragg-peak fringe analysis, J APPL PHYS, 89(6), 2001, pp. 3125-3131
Determination of Ir consumption during thermal oxidation and PbZrxTi1-xO3 processing using Bragg-peak fringe analysis
Authors: Saenger, KL Neumayer, DA
Citation: Kl. Saenger et Da. Neumayer, Determination of Ir consumption during thermal oxidation and PbZrxTi1-xO3 processing using Bragg-peak fringe analysis, J APPL PHYS, 89(6), 2001, pp. 3132-3137
Submicrometer platinum electrodes by through-mask plating
Authors: Saenger, KL Costrini, G Kotecki, DE Kwietniak, KT Andricacos, PC
Citation: Kl. Saenger et al., Submicrometer platinum electrodes by through-mask plating, J ELCHEM SO, 148(11), 2001, pp. C758-C761
Oxygen stoichiometry in PdOx and PdOx/Pt electrode layers during processing of ferroelectric and high-epsilon perovskites
Authors: Saenger, KL Cabral, C Duncombe, PR Grill, A Neumayer, DA
Citation: Kl. Saenger et al., Oxygen stoichiometry in PdOx and PdOx/Pt electrode layers during processing of ferroelectric and high-epsilon perovskites, J MATER RES, 15(4), 2000, pp. 961-966
Optimization of Ta-Si-N thin films for use as oxidation-resistant diffusion barriers
Authors: Cabral, C Saenger, KL Kotecki, DE Harper, JME
Citation: C. Cabral et al., Optimization of Ta-Si-N thin films for use as oxidation-resistant diffusion barriers, J MATER RES, 15(1), 2000, pp. 194-198
Effects of annealing conditions on charge loss mechanisms in MOCVD Ba0.7Sr0.3TiO3 thin film capacitors
Authors: Baniecki, JD Laibowitz, RB Shaw, TM Saenger, KL Duncombe, PR Cabral, C Kotecki, DE Shen, H Lian, J Ma, QY
Citation: Jd. Baniecki et al., Effects of annealing conditions on charge loss mechanisms in MOCVD Ba0.7Sr0.3TiO3 thin film capacitors, J EUR CERAM, 19(6-7), 1999, pp. 1457-1461
Thermal stability and oxygen-loss characteristics of Pt(O) films prepared by reactive sputtering
Authors: Saenger, KL Cabral, C Lavoie, C Rossnagel, SM
Citation: Kl. Saenger et al., Thermal stability and oxygen-loss characteristics of Pt(O) films prepared by reactive sputtering, J APPL PHYS, 86(11), 1999, pp. 6084-6087
(Ba,Sr)TiO3 dielectrics for future stacked-capacitor DRAM
Authors: Kotecki, DE Baniecki, JD Shen, H Laibowitz, RB Saenger, KL Lian, JJ Shaw, TM Athavale, SD Cabral, C Duncombe, PR Gutsche, M Kunkel, G Park, YJ Wang, YY Wise, R
Citation: De. Kotecki et al., (Ba,Sr)TiO3 dielectrics for future stacked-capacitor DRAM, IBM J RES, 43(3), 1999, pp. 367-382
Risultati: 1-8 |