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Citation: Ns. Saks et al., Low-dose aluminum and boron implants in 4H and 6H silicon carbide, J APPL PHYS, 90(6), 2001, pp. 2796-2805

Authors: Saks, NS Agarwal, AK

Citation: Ns. Saks et Ak. Agarwal, Hall mobility and free electron density at the SiC/SiO2 interface in 4H-SiC, APPL PHYS L, 77(20), 2000, pp. 3281-3283

Authors: Jernigan, GG Stahlbush, RE Saks, NS

Citation: Gg. Jernigan et al., Effect of oxidation and reoxidation on the oxide-substrate interface of 4H-and 6H-SiC, APPL PHYS L, 77(10), 2000, pp. 1437-1439

Authors: Saks, NS Mani, SS Agarwal, AK

Citation: Ns. Saks et al., Interface trap profile near the band edges at the 4H-SiC/SiO2 interface, APPL PHYS L, 76(16), 2000, pp. 2250-2252

Authors: Saks, NS Agarwal, AK Mani, SS Hegde, VS

Citation: Ns. Saks et al., Low-dose nitrogen implants in 6H-silicon carbide, APPL PHYS L, 76(14), 2000, pp. 1896-1898

Authors: Saks, NS Mani, SS Agarwal, AK Ancona, MG

Citation: Ns. Saks et al., A 475-V high-voltage 6H-SiC lateral MOSFET, IEEE ELEC D, 20(8), 1999, pp. 431-433