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Results: 1-19 |
Results: 19
Phosphorus doping in Si1-x-yGexCy epitaxial growth by low-pressure chemical vapor deposition using a SiH4-GeH4-CH3SiH3-PH3-H-2 gas system
Authors: Lee, D Noda, T Shim, H Sakuraba, M Matsuura, T Murota, J
Citation: D. Lee et al., Phosphorus doping in Si1-x-yGexCy epitaxial growth by low-pressure chemical vapor deposition using a SiH4-GeH4-CH3SiH3-PH3-H-2 gas system, JPN J A P 1, 40(4B), 2001, pp. 2697-2700
Epitaxial growth of heavily P-doped Si films at 450 degrees C by alternately supplied PH3 and SiH4
Authors: Shimamune, Y Sakuraba, M Matsuura, T Murota, J
Citation: Y. Shimamune et al., Epitaxial growth of heavily P-doped Si films at 450 degrees C by alternately supplied PH3 and SiH4, J PHYS IV, 11(PR3), 2001, pp. 255-260
Atomic-order thermal nitridation of Si(100) and subsequent growth of Si
Authors: Watanabe, T Sakuraba, M Matsuura, T Murota, J
Citation: T. Watanabe et al., Atomic-order thermal nitridation of Si(100) and subsequent growth of Si, J VAC SCI A, 19(4), 2001, pp. 1907-1911
Deep circumflex iliac perforator flap with iliac crest for mandibular reconstruction
Authors: Kimata, Y Uchiyama, K Sakuraba, M Ebihara, S Hayashi, R Asakage, T Nakatsuka, T Harii, K
Citation: Y. Kimata et al., Deep circumflex iliac perforator flap with iliac crest for mandibular reconstruction, BR J PL SUR, 54(6), 2001, pp. 487-490
Surface reaction of CH3SiH3 on Ge(100) and Si(100)
Authors: Takatsuka, T Fujiu, M Sakuraba, M Matsuura, T Murota, J
Citation: T. Takatsuka et al., Surface reaction of CH3SiH3 on Ge(100) and Si(100), APPL SURF S, 162, 2000, pp. 156-160
Atomic-layer adsorption of P on Si(100) and Ge(100) by PH3 using an ultraclean low-pressure chemical vapor deposition
Authors: Shimamune, Y Sakuraba, M Matsuura, T Murota, J
Citation: Y. Shimamune et al., Atomic-layer adsorption of P on Si(100) and Ge(100) by PH3 using an ultraclean low-pressure chemical vapor deposition, APPL SURF S, 162, 2000, pp. 390-394
Doping and electrical characteristics of in-situ heavily B-doped Si1-x-yGexCy films epitaxially grown using ultraclean LPCVD
Authors: Noda, T Lee, D Shim, H Sakuraba, M Matsuura, T Murota, J
Citation: T. Noda et al., Doping and electrical characteristics of in-situ heavily B-doped Si1-x-yGexCy films epitaxially grown using ultraclean LPCVD, THIN SOL FI, 380(1-2), 2000, pp. 57-60
Atomic-layer doping in Si by alternately supplied PH3 and SiH4
Authors: Shimamune, Y Sakuraba, M Matsuura, T Murota, J
Citation: Y. Shimamune et al., Atomic-layer doping in Si by alternately supplied PH3 and SiH4, THIN SOL FI, 380(1-2), 2000, pp. 134-136
Epitaxial growth of Si1-x-yGexCy film on Si(100) in a SiH4-GeH4-CH3SiH3 reaction
Authors: Ichikawa, A Hirose, Y Ikeda, T Noda, T Fujiu, M Takatsuka, T Moriya, A Sakuraba, M Matsuura, T Murota, J
Citation: A. Ichikawa et al., Epitaxial growth of Si1-x-yGexCy film on Si(100) in a SiH4-GeH4-CH3SiH3 reaction, THIN SOL FI, 369(1-2), 2000, pp. 167-170
Segregation and diffusion of impurities from doped Si1-xGex films into silicon
Authors: Kobayashi, S Aoki, T Mikoshiba, N Sakuraba, M Matsuura, T Murota, J
Citation: S. Kobayashi et al., Segregation and diffusion of impurities from doped Si1-xGex films into silicon, THIN SOL FI, 369(1-2), 2000, pp. 222-225
Drain leakage current and instability of drain current in Si/Si1-xGex MOSFETs
Authors: Tsuchiya, T Goto, K Sakuraba, M Matsuura, T Murota, J
Citation: T. Tsuchiya et al., Drain leakage current and instability of drain current in Si/Si1-xGex MOSFETs, THIN SOL FI, 369(1-2), 2000, pp. 379-382
Anterolateral thigh flap donor-site complications and morbidity
Authors: Kimata, Y Uchiyama, K Ebihara, S Sakuraba, M Iida, H Nakatsuka, T Harii, K
Citation: Y. Kimata et al., Anterolateral thigh flap donor-site complications and morbidity, PLAS R SURG, 106(3), 2000, pp. 584-589
Simple reconstruction of large pharyngeal defects with free jejunal transfer
Authors: Kimata, Y Uchiyama, K Sakuraba, M Ebihara, S Nakatsuka, T Harii, K
Citation: Y. Kimata et al., Simple reconstruction of large pharyngeal defects with free jejunal transfer, LARYNGOSCOP, 110(7), 2000, pp. 1230-1233
Observation of sharp current peaks in resonant tunneling diode with strained Si0.6Ge0.4/Si(100) grown by low-temperature low-pressure CVD
Authors: Han, P Sakuraba, M Jeong, YC Bock, K Matsuura, T Murota, J
Citation: P. Han et al., Observation of sharp current peaks in resonant tunneling diode with strained Si0.6Ge0.4/Si(100) grown by low-temperature low-pressure CVD, J CRYST GR, 209(2-3), 2000, pp. 315-320
Separation between surface adsorption and reaction of NH3 on Si(100) by flash heating
Authors: Watanabe, T Sakuraba, M Matsuura, T Murota, J
Citation: T. Watanabe et al., Separation between surface adsorption and reaction of NH3 on Si(100) by flash heating, JPN J A P 1, 38(1B), 1999, pp. 515-517
Layer-by-layer growth of silicon nitride films by NH3 and SiH4
Authors: Watanabe, T Sakuraba, M Matsuura, T Murota, J
Citation: T. Watanabe et al., Layer-by-layer growth of silicon nitride films by NH3 and SiH4, J PHYS IV, 9(P8), 1999, pp. 333-340
Doping and electrical characteristics of in situ heavily B-doped Si1-xGex films epitaxially grown using ultraclean LPCVD
Authors: Moriya, A Sakuraba, M Matsuura, T Murota, J
Citation: A. Moriya et al., Doping and electrical characteristics of in situ heavily B-doped Si1-xGex films epitaxially grown using ultraclean LPCVD, THIN SOL FI, 344, 1999, pp. 541-544
Anterolateral thigh flap for abdominal wall reconstruction
Authors: Kimata, Y Uchiyama, K Sekido, M Sakuraba, M Iida, H Nakatsuka, T Harii, K
Citation: Y. Kimata et al., Anterolateral thigh flap for abdominal wall reconstruction, PLAS R SURG, 103(4), 1999, pp. 1191-1197
Segregation and diffusion of phosphorus from doped Si1-xGex films into silicon
Authors: Kobayashi, S Iizuka, M Aoki, T Mikoshiba, N Sakuraba, M Matsuura, T Murota, J
Citation: S. Kobayashi et al., Segregation and diffusion of phosphorus from doped Si1-xGex films into silicon, J APPL PHYS, 86(10), 1999, pp. 5480-5483
Risultati: 1-19 |