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Results:
1-8
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Results: 8
Authors:
Han, JP
GUo, X
Broadbridge, CC
Ma, TP
Ils, A
Cantoni, M
Sallese, JM
Fazan, P
Citation: Jp. Han et al., Buffer layer dependence of memory effects for SrBi2Ta2O9 on Si, INTEGR FERR, 34(1-4), 2001, pp. 1505-1512
Authors:
Sallese, JM
Grabinski, W
Meyer, V
Bassin, C
Fazan, P
Citation: Jm. Sallese et al., Electrical modeling of a pressure sensor MOSFET, SENS ACTU-A, 94(1-2), 2001, pp. 53-58
Authors:
Okhonin, S
Nagoga, M
Sallese, JM
Fazan, P
Faynot, O
Pontcharra, J
Cristoloveanu, S
Citation: S. Okhonin et al., Transient effects in PD SOINMOSFETs, MICROEL ENG, 59(1-4), 2001, pp. 469-473
Authors:
Porret, AS
Sallese, JM
Enz, CC
Citation: As. Porret et al., A compact non-quasi-static extension of a charge-based MOS model, IEEE DEVICE, 48(8), 2001, pp. 1647-1654
Authors:
Ils, A
Cantoni, M
Sallese, JM
Fazan, P
Han, JP
Guo, X
Ma, TP
Citation: A. Ils et al., Transmission electron microscope investigation of SrBi2Ta2O9 memory capacitors on Si with silicon dioxide and silicon nitride as buffers, J VAC SCI B, 18(4), 2000, pp. 1915-1918
Authors:
Sallese, JM
Porret, AS
Citation: Jm. Sallese et As. Porret, A novel approach to charge-based non-quasi-static model of the MOS transistor valid in all modes of operation, SOL ST ELEC, 44(6), 2000, pp. 887-894
Authors:
Sallese, JM
Bucher, M
Lallement, C
Citation: Jm. Sallese et al., Improved analytical modeling of polysilicon depletion in MOSFETs for circuit simulation, SOL ST ELEC, 44(6), 2000, pp. 905-912
Authors:
Sallese, JM
Ils, A
Bouvet, D
Fazan, P
Merritt, C
Citation: Jm. Sallese et al., Modeling of the depletion of the amorphous-silicon surface during hemispherical grained silicon formation, J APPL PHYS, 88(10), 2000, pp. 5751-5755
Risultati:
1-8
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