Authors:
Ils, A
Cantoni, M
Sallese, JM
Fazan, P
Han, JP
Guo, X
Ma, TP
Citation: A. Ils et al., Transmission electron microscope investigation of SrBi2Ta2O9 memory capacitors on Si with silicon dioxide and silicon nitride as buffers, J VAC SCI B, 18(4), 2000, pp. 1915-1918
Citation: Jm. Sallese et As. Porret, A novel approach to charge-based non-quasi-static model of the MOS transistor valid in all modes of operation, SOL ST ELEC, 44(6), 2000, pp. 887-894
Citation: Jm. Sallese et al., Improved analytical modeling of polysilicon depletion in MOSFETs for circuit simulation, SOL ST ELEC, 44(6), 2000, pp. 905-912
Authors:
Sallese, JM
Ils, A
Bouvet, D
Fazan, P
Merritt, C
Citation: Jm. Sallese et al., Modeling of the depletion of the amorphous-silicon surface during hemispherical grained silicon formation, J APPL PHYS, 88(10), 2000, pp. 5751-5755