AAAAAA
Results:
1-7
|
Results: 7
Authors:
Chen, XY
Johansen, JA
Salm, C
van Rheenen, AD
Citation: Xy. Chen et al., On low-frequency noise of polycrystalline GexSi1-x for sub-micron CMOS technologies, SOL ST ELEC, 45(11), 2001, pp. 1967-1971
Authors:
Mouthaan, AJ
Salm, C
Lunenborg, MM
de Wolf, MARC
Kuper, FG
Citation: Aj. Mouthaan et al., Dealing with hot-carrier aging in nMOS and DMOS, models, simulations and characterizations, MICROEL REL, 40(6), 2000, pp. 909-917
Authors:
Ponomarev, YV
Stolk, PA
Salm, C
Schmitz, J
Woerlee, PH
Citation: Yv. Ponomarev et al., High-performance deep submicron CMOS technologies with polycrystalline-SiGe gates, IEEE DEVICE, 47(4), 2000, pp. 848-855
Authors:
Houtsma, VE
Holleman, J
Salm, C
Widdershoven, FP
Woerlee, PH
Citation: Ve. Houtsma et al., Stress-induced leakage current in p(+) poly MOS capacitors with poly-Si and Poly-Si0.7Ge0.3 gate material, IEEE ELEC D, 20(7), 1999, pp. 314-316
Authors:
Houtsma, VE
Holleman, J
Salm, C
Woerlee, PH
Citation: Ve. Houtsma et al., SILC in MOS capacitors with poly-Si and poly-Si0.7Ge0.3 gate material, MICROEL ENG, 48(1-4), 1999, pp. 415-418
Authors:
Chen, XY
Salm, C
Hooge, FN
Woerlee, PH
Citation: Xy. Chen et al., 1/f noise in polycrystalline SiGe analyzed in terms of mobility fluctuations, SOL ST ELEC, 43(9), 1999, pp. 1715-1724
Authors:
Chen, XY
Salm, C
Citation: Xy. Chen et C. Salm, Doping dependence of low-frequency noise in polycrystalline SiGe film resistors, APPL PHYS L, 75(4), 1999, pp. 516-518
Risultati:
1-7
|