Authors: Narsale, AM Damle, AR Ali, YP Kanjilal, D Arora, BM Shah, AP Lokhre, SG Salvi, VP

Citation: Am. Narsale et al., Annealing effects on electrical characteristics of 100 MeV Si-28 implantation in GaAs, J MAT S-M E, 11(5), 2000, pp. 439-443

Authors: Damle, AR Narsale, AM Ali, YP Arora, BM Gokhale, MR Kanjilal, D Salvi, VP

Citation: Ar. Damle et al., Near-infrared transmission characteristics of GaAs implanted with high energy (100 Mev) Si-28 ions, NUCL INST B, 168(2), 2000, pp. 229-236

Authors: Ali, YP Narsale, AM Arora, BM Gokhale, MR Kanjilal, D Salvi, VP

Citation: Yp. Ali et al., Electrical characteristics of high energy Sn-120 implantation in p-type GaAs, NUCL INST B, 156(1-4), 1999, pp. 78-83