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Results:
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Results: 2
A study of deep traps at the SiO2/6H-SiC interface relying upon the nonequilibrium field effect
Authors:
Ivanov, PA Samsonova, TP Panteleev, VN Polyakov, DY
Citation:
Pa. Ivanov et al., A study of deep traps at the SiO2/6H-SiC interface relying upon the nonequilibrium field effect, SEMICONDUCT, 35(4), 2001, pp. 468-473
SiC-based phototransistor with a tunnel MOS emitter
Authors:
Grekhov, IV Ivanov, PA Samsonova, TP Shulekin, AF Vexler, MI
Citation:
Iv. Grekhov et al., SiC-based phototransistor with a tunnel MOS emitter, IEEE DEVICE, 46(3), 1999, pp. 577-579
Risultati:
1-2
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