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Citation: Yc. Liang et al., Oxide-bypassed VDMOS (OBVDMOS): An alternative to superjunction high voltage MOS power devices, IEEE ELEC D, 22(8), 2001, pp. 407-409

Authors: Chen, HM Samudra, GS Chan, DSH Ibrahim, Y

Citation: Hm. Chen et al., Global optimization for digital MOS circuits performance, IEEE COMP A, 19(1), 2000, pp. 161-164

Authors: Rajendran, K Samudra, GS

Citation: K. Rajendran et Gs. Samudra, Modelling of transconductance-to-current ratio (g(m)/I-D) analysis on double-gate SOI MOSFETs, SEMIC SCI T, 15(2), 2000, pp. 139-144

Authors: Xu, SM Gan, KP Samudra, GS Liang, YC Sin, JKO

Citation: Sm. Xu et al., 120 V interdigitated-drain LDMOS (IDLDMOS) on SOI substrate breaking powerLDMOS limit, IEEE DEVICE, 47(10), 2000, pp. 1980-1985

Authors: Najafi, A Farhang-Boroujeny, B Samudra, GS

Citation: A. Najafi et al., A VLSI design for implementation of transform domain adaptive filters, VLSI DESIGN, 9(2), 1999, pp. 119-133