Authors: Venger, EF Konakova, RV Okhrimenko, OB Sapko, SY Shekhovtsov, LV Ivanov, VN

Citation: Ef. Venger et al., The transition layer in TiB2-GaAs and Au-TiB2-GaAs Schottky contacts, SEMICONDUCT, 35(4), 2001, pp. 427-432

Authors: Shekhovtsov, LV Venger, EF Semenova, GN Sadof'ev, YG Korsunskaya, NE Semtsiv, MP Sapko, SY

Citation: Lv. Shekhovtsov et al., Features of the long-term photo EMF relaxation in a heteroepitaxial ZnSe-GaAs structure, TECH PHYS L, 26(3), 2000, pp. 190-192

Authors: Venger, EF Sadof'ev, YG Semenova, GN Korsunskaya, NE Klad'ko, VP Shechovtsov, LV Semtsiv, MP Borkovskaya, LV Sapko, SY

Citation: Ef. Venger et al., Lateral and depth inhomogeneities in Zn-based heterostructures grown on GaAs by MBE, THIN SOL FI, 367(1-2), 2000, pp. 184-188