Authors: Schwegler, V Schad, SS Scherer, M Kamp, M Ulu, G Emsley, M Unlu, MS Lell, A Bader, S Hahne, B Lugauer, HJ Kuhn, F Weimar, A Harle, V

Citation: V. Schwegler et al., GaN-based lasers on SiC: influence of mirror reflectivity on L-I characteristics, J CRYST GR, 230(3-4), 2001, pp. 512-516

Authors: Schwegler, V Schad, SS Kirchner, C Seyboth, M Kamp, M Ebeling, KJ Kudryashov, VE Turkin, AN Yunovich, AE Stempfle, U Link, A Limmer, W Sauer, R

Citation: V. Schwegler et al., Ohmic heating of InGaN LEDs during operation: Determination of the junction temperature and its influence on device performance, PHYS ST S-A, 176(1), 1999, pp. 783-786