AAAAAA
Results: 1-25/63
Authors:
Kratzer, P
Scheffler, M
Citation: P. Kratzer et M. Scheffler, Surface knowledge: Toward a predictive theory of materials, COMPUT SC E, 3(6), 2001, pp. 16-25
Authors:
Dohmen, R
Pichlmeier, J
Petersen, M
Wagner, F
Scheffler, M
Citation: R. Dohmen et al., Parallel FP-LAPW for distributed-memory machines, COMPUT SC E, 3(4), 2001, pp. 18-29
Authors:
Troster, G
Scheffler, M
Citation: G. Troster et M. Scheffler, Special section on the Chip Package Codesign Workshop - Foreword, IEEE T AD P, 24(3), 2001, pp. 364-365
Authors:
Hirt, E
Scheffler, M
Troster, G
Citation: E. Hirt et al., Virtual prototyping for high density packaging systems, IEEE T AD P, 24(3), 2001, pp. 392-400
Authors:
Feibelman, PJ
Hammer, B
Norskov, JK
Wagner, F
Scheffler, M
Stumpf, R
Watwe, R
Dumesic, J
Citation: Pj. Feibelman et al., The CO/Pt(111) puzzle, J PHYS CH B, 105(18), 2001, pp. 4018-4025
Authors:
Wang, LG
Kratzer, P
Scheffler, M
Liu, QKK
Citation: Lg. Wang et al., Island dissolution during capping layer growth interruption, APPL PHYS A, 73(2), 2001, pp. 161-165
Authors:
Penev, E
Kratzer, P
Scheffler, M
Citation: E. Penev et al., Effect of strain on surface diffusion in semiconductor heteroepitaxy - art. no. 085401, PHYS REV B, 6408(8), 2001, pp. 5401
Authors:
Tatarczyk, K
Schindlmayr, A
Scheffler, M
Citation: K. Tatarczyk et al., Exchange-correlation kernels for excited states in solids - art. no. 235106, PHYS REV B, 6323(23), 2001, pp. 5106
Authors:
Ganduglia-Pirovano, MV
Scheffler, M
Baraldi, A
Lizzit, S
Comelli, G
Paolucci, G
Rosei, R
Citation: Mv. Ganduglia-pirovano et al., Oxygen-induced Rh 3d(5/2) surface core-level shifts on Rh(111) - art. no. 205415, PHYS REV B, 6320(20), 2001, pp. 5415
Authors:
Lizzit, S
Baraldi, A
Groso, A
Reuter, K
Ganduglia-Pirovano, MV
Stampl, C
Scheffler, M
Stichler, M
Keller, C
Wurth, W
Menzel, D
Citation: S. Lizzit et al., Surface core-level shifts of clean and oxygen-covered Ru(0001) - art. no. 205419, PHYS REV B, 6320(20), 2001, pp. 5419
Authors:
Reuter, K
Scheffler, M
Citation: K. Reuter et M. Scheffler, Surface core-level shifts at an oxygen-rich Ru surface: O/Ru(0001) vs. RuO2(110), SURF SCI, 490(1-2), 2001, pp. 20-28
Authors:
Healy, SB
Filippi, C
Kratzer, P
Penev, E
Scheffler, M
Citation: Sb. Healy et al., Role of electronic correlation in the Si(100) reconstruction: A quantum Monte Carlo study - art. no. 016105, PHYS REV L, 8701(1), 2001, pp. 6105-NIL_101
Authors:
Marquez, J
Kratzer, P
Geelhaar, L
Jacobi, K
Scheffler, M
Citation: J. Marquez et al., Atomic structure of the stoichiometric GaAs(114) surface, PHYS REV L, 86(1), 2001, pp. 115-118
Authors:
Scheffler, M
Cottet, D
Troster, G
Citation: M. Scheffler et al., A simplified yield modeling method for design rule trade-off in interconnection substrates, MICROEL REL, 41(6), 2001, pp. 861-869
Authors:
Ebert, P
Quadbeck, P
Urban, K
Henninger, B
Horn, K
Schwarz, G
Neugebauer, J
Scheffler, M
Citation: P. Ebert et al., Identification of surface anion antisite defects in (110) surfaces of III-V semiconductors, APPL PHYS L, 79(18), 2001, pp. 2877-2879
Authors:
Colombo, P
Gambaryan-Roisman, T
Scheffler, M
Buhler, P
Greil, P
Citation: P. Colombo et al., Conductive ceramic foams from preceramic polymers, J AM CERAM, 84(10), 2001, pp. 2265-2268
Authors:
Wang, LG
Kratzer, P
Scheffler, M
Citation: Lg. Wang et al., Energetics of InAs thin films and islands on the GaAs(001) substrate, JPN J A P 1, 39(7B), 2000, pp. 4298-4301
Authors:
Pentcheva, R
Scheffler, M
Citation: R. Pentcheva et M. Scheffler, Stable and metastable structures of Co on Cu(001): An ab initio study, PHYS REV B, 61(3), 2000, pp. 2211-2220
Authors:
Schwartz, A
Scheffler, M
Anlage, SM
Citation: A. Schwartz et al., Determination of the magnetization scaling exponent for single-crystal La0.8Sr0.2MnO3 by broadband microwave surface impedance measurements, PHYS REV B, 61(2), 2000, pp. R870-R873
Authors:
Gross, A
Scheffler, M
Citation: A. Gross et M. Scheffler, Dynamics of hydrogen dissociation at the sulfur-covered Pd(100) surface, PHYS REV B, 61(12), 2000, pp. 8425-8432
Authors:
Neugebauer, J
Zywietz, T
Scheffler, M
Northrup, J
Citation: J. Neugebauer et al., Theory of surfaces and interfaces of group III-nitrides, APPL SURF S, 159, 2000, pp. 355-359
Authors:
Wang, LG
Kratzer, P
Moll, N
Scheffler, M
Citation: Lg. Wang et al., Size, shape, and stability of InAs quantum dots on the GaAs(001) substrate, PHYS REV B, 62(3), 2000, pp. 1897-1904
Authors:
Hertel, G
Kerr, NL
Scheffler, M
Geister, S
Messe, LA
Citation: G. Hertel et al., Exploring the Kohler motivation gain effect: Impression management and spontaneous goal setting, Z SOZIALPSY, 31(4), 2000, pp. 204-220
Authors:
Lee, SH
Moritz, W
Scheffler, M
Citation: Sh. Lee et al., GaAs(001) surface under conditions of low As pressure: Evidence for a novel surface geometry, PHYS REV L, 85(18), 2000, pp. 3890-3893
Authors:
Ebert, P
Urban, K
Aballe, L
Chen, CH
Horn, K
Schwarz, G
Neugebauer, J
Scheffler, M
Citation: P. Ebert et al., Symmetric versus nonsymmetric structure of the phosphorus vacancy on InP(110), PHYS REV L, 84(25), 2000, pp. 5816-5819