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Results: 1-25 | 26-50 | 51-59 |
Results: 51-59/59
Dynamics of electronic "bubble" formation in solid hydrogen: A classical model calculation based on fluid dynamics
Authors: Vigliotti, F Sarraf, E Chergui, M Scholz, R
Citation: F. Vigliotti et al., Dynamics of electronic "bubble" formation in solid hydrogen: A classical model calculation based on fluid dynamics, PHYS REV L, 83(12), 1999, pp. 2355-2358
Dynamics of electronic "bubble" formation in solid hydrogen
Authors: Vigliotti, F Jeannin, C Portella-Oberli, MT Chergui, M Scholz, R
Citation: F. Vigliotti et al., Dynamics of electronic "bubble" formation in solid hydrogen, J LUMINESC, 83-4, 1999, pp. 135-138
Gettering of Cu by microcavities in bonded/ion-cut silicon-on-insulator and separation by implantation of oxygen
Authors: Zhang, MO Zeng, XC Chu, PK Scholz, R Lin, CL
Citation: Mo. Zhang et al., Gettering of Cu by microcavities in bonded/ion-cut silicon-on-insulator and separation by implantation of oxygen, J APPL PHYS, 86(8), 1999, pp. 4214-4219
"Compliant" twist-bonded GaAs substrates: The potential role of pinholes
Authors: Kopperschmidt, P Senz, S Scholz, R Gosele, U
Citation: P. Kopperschmidt et al., "Compliant" twist-bonded GaAs substrates: The potential role of pinholes, APPL PHYS L, 74(3), 1999, pp. 374-376
Free-carrier screening of polarization fields in wurtzite GaN/InGaN laser structures
Authors: Della Sala, F Di Carlo, A Lugli, P Bernardini, F Fiorentini, V Scholz, R Jancu, JM
Citation: F. Della Sala et al., Free-carrier screening of polarization fields in wurtzite GaN/InGaN laser structures, APPL PHYS L, 74(14), 1999, pp. 2002-2004
Microscopy of SiC layers grown by C-60 deposition on Si (100)
Authors: Scholz, R Gosele, U Volz, K Rauschenbach, B
Citation: R. Scholz et al., Microscopy of SiC layers grown by C-60 deposition on Si (100), JPN J A P 1, 37(11), 1998, pp. 6090-6093
Direct wafer bonding: A new fabrication method for ferroelectric-silicon heterostructures
Authors: Alexe, M Scholz, R Kastner, G Pignolet, A Gosele, U
Citation: M. Alexe et al., Direct wafer bonding: A new fabrication method for ferroelectric-silicon heterostructures, J PHYS IV, 8(P9), 1998, pp. 239-242
Trials of the Austrian Breast Cancer Group (ABC)
Authors: Jakesz, R Hausmaninger, H Samonigg, H Kubista, E Haider, K Mlineritsch, B Schmid, M Tausch, C Reiner, G Renner, K Stierer, M Jatzko, G Hofbauer, F Fridrik, M Schennach, W Sevelda, P Dadak, C Haid, A Scholz, R Lenzhofer, P Steindorfer, P Berger, A Mischinger, HJ
Citation: R. Jakesz et al., Trials of the Austrian Breast Cancer Group (ABC), ZBL CHIR, 123, 1998, pp. 28-32
Defect distribution and evolution in He+ implanted Si studied by variable-energy positron beam
Authors: Zhang, M Lin, CL Weng, HM Scholz, R Gosele, U
Citation: M. Zhang et al., Defect distribution and evolution in He+ implanted Si studied by variable-energy positron beam, THIN SOL FI, 333(1-2), 1998, pp. 245-250
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