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Results: 1-7 |
Results: 7
Tervalent conducting polymers with tailor-made work functions: Preparation, characterization, and applications as cathodes in electroluminescent devices
Authors: Bloom, CJ Elliott, CM Schroeder, PG France, CB Parkinson, BA
Citation: Cj. Bloom et al., Tervalent conducting polymers with tailor-made work functions: Preparation, characterization, and applications as cathodes in electroluminescent devices, J AM CHEM S, 123(38), 2001, pp. 9436-9442
Investigation of band bending and charging phenomena in frontier orbital alignment measurements of para-quaterphenyl thin films grown on highly oriented pyrolytic graphite and SnS2
Authors: Schroeder, PG Nelson, MW Parkinson, BA Schlaf, R
Citation: Pg. Schroeder et al., Investigation of band bending and charging phenomena in frontier orbital alignment measurements of para-quaterphenyl thin films grown on highly oriented pyrolytic graphite and SnS2, SURF SCI, 459(3), 2000, pp. 349-364
Determination of interface dipole and band bending at the Ag/tris (8-hydroxyquinolinato) gallium organic Schottky contact by ultraviolet photoemission spectroscopy
Authors: Schlaf, R Schroeder, PG Nelson, MW Parkinson, BA Merritt, CD Crisafulli, LA Murata, H Kafafi, ZH
Citation: R. Schlaf et al., Determination of interface dipole and band bending at the Ag/tris (8-hydroxyquinolinato) gallium organic Schottky contact by ultraviolet photoemission spectroscopy, SURF SCI, 450(1-2), 2000, pp. 142-152
Two-dimensional dopant profiling of an integrated circuit using bias-applied phase-imaging tapping mode atomic force microscopy
Authors: Nelson, MW Schroeder, PG Schlaf, R Parkinson, BA
Citation: Mw. Nelson et al., Two-dimensional dopant profiling of an integrated circuit using bias-applied phase-imaging tapping mode atomic force microscopy, EL SOLID ST, 2(9), 1999, pp. 475-477
Two-dimensional dopant profiling of patterned Si wafers using phase imaging tapping mode atomic force microscopy with applied biases
Authors: Nelson, MW Schroeder, PG Schlaf, R Parkinson, BA
Citation: Mw. Nelson et al., Two-dimensional dopant profiling of patterned Si wafers using phase imaging tapping mode atomic force microscopy with applied biases, J VAC SCI B, 17(4), 1999, pp. 1354-1360
Observation of strong band bending in perylene tetracarboxylic dianhydridethin films grown on SnS2
Authors: Schlaf, R Schroeder, PG Nelson, MW Parkinson, BA Lee, PA Nebesny, KW Armstrong, NR
Citation: R. Schlaf et al., Observation of strong band bending in perylene tetracarboxylic dianhydridethin films grown on SnS2, J APPL PHYS, 86(3), 1999, pp. 1499-1509
Spatially resolved dopant profiling of patterned Si wafers by bias-appliedphase-imaging tapping-mode atomic force microscopy
Authors: Nelson, MW Schroeder, PG Schlaf, R Parkinson, BA Almgren, CW Erickson, AN
Citation: Mw. Nelson et al., Spatially resolved dopant profiling of patterned Si wafers by bias-appliedphase-imaging tapping-mode atomic force microscopy, APPL PHYS L, 74(10), 1999, pp. 1421-1423
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